Liquid crystal display device, polysilicon array substrate and manufacturing method

The technology of an array substrate and a manufacturing method, which is applied in the field of liquid crystal display devices, can solve the problems of high manufacturing cost and complicated manufacturing process of the display panel, and achieve the effects of improving the display effect, simplifying the interlayer structure, and reducing the manufacturing cost

Inactive Publication Date: 2013-04-03
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The manufacturing process of the above-mentioned LTPS array substrate is relatively complicated, requiring

Method used

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  • Liquid crystal display device, polysilicon array substrate and manufacturing method
  • Liquid crystal display device, polysilicon array substrate and manufacturing method
  • Liquid crystal display device, polysilicon array substrate and manufacturing method

Examples

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Example Embodiment

[0045] As a specific embodiment of the present invention, a method for manufacturing an array substrate is used to form the above-mentioned top-gate TFT polysilicon array substrate, such as Figure 4 As shown, the method includes:

[0046] Step S1, forming a polysilicon active layer and pixel electrodes.

[0047] It should be noted that, in the present invention, the patterning process includes the steps of glue coating, exposure, development, etching, photoresist stripping, and the like.

[0048] Specific, such as Figure 2a As shown, first, a buffer layer 2 is formed on the substrate 1, and then an amorphous silicon layer is formed on the buffer layer 2. Low-temperature polysilicon technology is used to convert the amorphous silicon layer into a polysilicon layer through an excimer laser annealing process. Then, the polysilicon active layer 3 is formed through process steps of masking, exposure, etching and photoresist removal through a patterning process. Then, a transparent cond...

Example Embodiment

[0062] As a preferred embodiment of the present invention, the manufacturing method of the array substrate of this embodiment further includes:

[0063] Step S7, forming a passivation layer on the substrate after step S6, and forming a peripheral connection hole through a patterning process.

[0064] Specific, such as Figure 2g As shown, first, a layer of insulating material is formed on the substrate after step S6, and the passivation layer 12 is formed. The passivation layer 12 is used to protect the structures and devices in the array substrate, and then a peripheral connection hole (not shown) is formed through a patterning process.

[0065] The manufacturing method of the array substrate provided by the present invention eliminates the organic layer and via structure in the prior art by adjusting the interlayer positions of the pixel electrode and the common electrode in the polysilicon array substrate, and simplifies the interlayer structure of the array substrate. The produc...

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Abstract

The embodiment of the invention discloses a liquid crystal display device, a polysilicon array substrate and a manufacturing method, relates to the field of liquid crystal display and specifically relates to an inter-layer structure of the array substrate and a production process of the array substrate. The polysilicon array substrate disclosed by the embodiment of the invention comprises a polysilicon TFT (thin-film transistor), as well as a pixel electrode which is arranged in the same layer with an active layer of the polysilicon TFT and a public electrode which is arranged in the same layer with a gate of the polysilicon TFT, wherein the public electrode and the pixel electrode are oppositely arranged, and the electrode which is positioned at the upper part in the public electrode and the pixel electrode is a slit-like electrode.

Description

technical field [0001] The invention relates to the field of liquid crystal display, in particular to a liquid crystal display device, a polysilicon array substrate and a manufacturing method. Background technique [0002] In recent years, with the application of liquid crystal display products more and more widely, liquid crystal display technology has become more and more perfect. TFT-LCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Field Effect Transistor-Liquid Crystal Display) occupies a very important position in the display field due to its high-quality image display, low energy consumption, and environmental protection. [0003] As a new manufacturing process of TFT-LCD, LTPS (Low Temperature Poly-Silicon, low temperature polysilicon) technology uses excimer laser annealing process to convert amorphous silicon (a-Si) thin film layer into polycrystalline silicon (Poly-Si) thin film layer. Compared with amorphous silicon materials, the electron mobility of ...

Claims

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Application Information

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IPC IPC(8): G02F1/1343G02F1/1362G02F1/1368H01L21/77
Inventor 辛燕霞朴承翊杨玉清石天雷杨慧光
Owner BOE TECH GRP CO LTD
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