Method for simulating and optimizing aluminum gate CMP (Chemical Mechanical Polishing) cooperative computing model

A technology of calculation model and simulation method, applied in calculation, instrument, electrical and digital data processing, etc., can solve the problems such as huge difference in characteristic curve of reaction process characteristic grinding rate, low efficiency, and inability to guarantee accuracy.

Active Publication Date: 2013-04-03
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, at present, the grinding mechanism of aluminum metal gates is not well understood, especially the reaction mechanism of the influence of the chemical properties of the grinding fluid on its grinding performance. Multi-batch and multi-chip test experiments are often not carried out at the same time, and the CMP grinding equipment at different time points The service life of consumables is different, resulting in huge differences in the characteristic curves of the grinding rate of the reaction process characteristics, and the measurement data u

Method used

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  • Method for simulating and optimizing aluminum gate CMP (Chemical Mechanical Polishing) cooperative computing model
  • Method for simulating and optimizing aluminum gate CMP (Chemical Mechanical Polishing) cooperative computing model
  • Method for simulating and optimizing aluminum gate CMP (Chemical Mechanical Polishing) cooperative computing model

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Embodiment 1

[0075] combine figure 1 Embodiment 1 of the simulation method of the present invention is described in detail.

[0076] figure 1 It is a flowchart of Embodiment 1 of the simulation method of the present invention, and the method includes the following steps:

[0077] S101. Obtain the initial height of the aluminum grid:

[0078] The initial surface height of the aluminum grid is obtained by using a general model in the field, that is, the surface height of the aluminum grid before grinding, and then the initial surface height is obtained by the aluminum grid CMP collaborative calculation model.

[0079] The aluminum grid CMP collaborative calculation model is:

[0080] MRR ( x , y , t ) = M ρ 0 ( k 60 ...

Embodiment 2

[0133] The adjustment of the CMP process parameters and the chemical kinetic parameters can be done before the model acquires the initial height of the aluminum grid, or before inputting the model parameters to the aluminum grid CMP collaborative calculation model. figure 2 It is shown that adjusting the simulation parameters is placed before obtaining the initial height of the aluminum grid.

[0134] S201. Adjust the CMP process parameters and chemical kinetic parameters of the aluminum gate CMP collaborative calculation model:

[0135] Technicians can adjust CMP process parameters and chemical kinetic parameters based on the simulation results. And because the establishment of the chemical reaction kinetic model in the aluminum grid CMP collaborative calculation model is obtained from the perspective of reaction mechanism, the CMP process parameters, chemical kinetic parameters and variables in the chemical reaction kinetic model are clearly defined Physical meaning, such ...

Embodiment 3

[0156] After the grinding height of the aluminum grid is obtained in the first or second embodiment, layout parasitic parameter extraction software can also be used to extract process parasitic parameters such as resistance or capacitance. see Figure 4 . Figure 4 The flow of the simulation method in the third embodiment of the present invention is shown, and the simulation method is an improvement on the basis of the second embodiment.

[0157] Steps S401-S405 are the same as steps S201-S205 in Embodiment 2. For detailed information, refer to Embodiment 2. For the sake of brevity, no detailed description is given.

[0158] S406. Extraction process parasitic parameters:

[0159] Based on the prediction of the surface height of the aluminum grid after grinding, the layout parasitic parameter extraction software is used to replace the fixed aluminum grid thickness with the simulated thickness that varies with different regions, so that more accurate process parasitic paramete...

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Abstract

The invention provides a method for simulating and optimizing an aluminum gate CMP (Chemical Mechanical Polishing) cooperative computing model. The method comprises the following simulating steps: obtaining an initial height of an aluminum gate; obtaining pressure distribution between a polishing pad and the surface of the aluminum gate through the adoption of an aluminum gate CMP pressure distribution accurate computing model according to the initial height of the aluminum gate; inputting model parameters at least including the pressure distribution between the polishing pad and the surface of the aluminum gate into the aluminum gate CMP cooperative computing model, wherein the aluminum gate CMP cooperative computing model is determined by the aluminum gate CMP pressure distribution accurate computing model and an aluminum gate CMP chemical reaction dynamic model; and simulating the aluminum gate CMP cooperative computing model within a preset time section according to parameters of the model, so as to obtain the height of the polished aluminum gate. Through the adoption of the simulating method provided by the invention, the working principle of the aluminum gate CMP is essentially disclosed and the obtained simulating result is closer to the actual and more accurate. In addition, the optimizing method can provide assistance to the process in rapidly optimizing technical parameters.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing technology and chemical mechanical polishing (CMP) modeling technology and its application, in particular to a simulation and optimization method of an aluminum grid CMP collaborative calculation model. Background technique [0002] Chemical-mechanical polishing (CMP) is an ultra-fine processing technology for chip surface planarization in manufacturability design and integrated circuit process research and development. Its simulation method plays an important guiding role in the analysis of CMP process and integrated circuit layout manufacturability design. . [0003] At present, the mainstream process technology of 32 / 28nm node is high-k dielectric and metal gate technology (HKMG), among which aluminum gate technology is a relatively advanced technology. However, at present, the grinding mechanism of aluminum metal gates is not well understood, especially the reaction mechanism o...

Claims

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Application Information

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IPC IPC(8): G06F17/50
Inventor 徐勤志陈岚方晶晶
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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