Method for simulating and optimizing aluminum gate CMP (Chemical Mechanical Polishing) cooperative computing model

Abstract

The invention provides a method for simulating and optimizing an aluminum gate CMP (Chemical Mechanical Polishing) cooperative computing model. The method comprises the following simulating steps: obtaining an initial height of an aluminum gate; obtaining pressure distribution between a polishing pad and the surface of the aluminum gate through the adoption of an aluminum gate CMP pressure distribution accurate computing model according to the initial height of the aluminum gate; inputting model parameters at least including the pressure distribution between the polishing pad and the surface of the aluminum gate into the aluminum gate CMP cooperative computing model, wherein the aluminum gate CMP cooperative computing model is determined by the aluminum gate CMP pressure distribution accurate computing model and an aluminum gate CMP chemical reaction dynamic model; and simulating the aluminum gate CMP cooperative computing model within a preset time section according to parameters of the model, so as to obtain the height of the polished aluminum gate. Through the adoption of the simulating method provided by the invention, the working principle of the aluminum gate CMP is essentially disclosed and the obtained simulating result is closer to the actual and more accurate. In addition, the optimizing method can provide assistance to the process in rapidly optimizing technical parameters.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing technology and chemical mechanical polishing (CMP) modeling technology and its application, in particular to a simulation and optimization method of an aluminum grid CMP collaborative calculation model. Background technique [0002] Chemical-mechanical polishing (CMP) is an ultra-fine processing technology for chip surface planarization in manufacturability design and integrated circuit process research and development. Its simulation method plays an important guiding role in the analysis of CMP process and integrated circuit layout manufacturability design. . [0003] At present, the mainstream process technology of 32 / 28nm node is high-k dielectric and metal gate technology (HKMG), among which aluminum gate technology is a relatively advanced technology. However, at present, the grinding mechanism of aluminum metal gates is not well understood, especially the reaction mechanism o...

AI Technical Summary

Problems solved by technology

However, at present, the grinding mechanism of aluminum metal gates is not well understood, especially the reaction mechanism of the influence of the chemical properties of the grinding fluid on its grinding performance. Multi-batch and multi-chip test experiments are often not carried out at the same time, and the CMP grinding equipment at different time points The service life of consumables is different, resulting in huge differences in the characteristic curves of the grinding rate of the reaction process characteristics, and the measurement data under different process conditions at different times are often not comparable. Therefore, the accuracy of the existing CMP model is severely challenged. The accuracy of the basic simulation method cannot be guaranteed, and the simulation results are not necessarily accurate

[0004] In addition, when optimizing process parameters such as external pressure or grinding fluid parameters in the prior art, engineers need to do a lot of repeated experiments to select the optimal process conditions, and this method of optimizing process parameters is inefficient

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