A kind of trench gate type MOS tube and its manufacturing method
A technology of MOS tubes and manufacturing methods, which is applied in the field of trench gate MOS tubes and trench gate MOS tubes. It can solve the problems of limited high-voltage resistance, influence on the overall performance of the device, and large resistance, and achieve small forward conductivity. The effect of voltage
Active Publication Date: 2015-08-19
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
Due to the limited high-voltage withstand capability of Schottky diodes, high-voltage diodes generally use PN junction diodes, which are characterized in that the larger the reverse bias voltage is, the wider the required breakdown-resistant depletion layer width is, and the wider the depletion layer width is. Wider will lead to greater resistance when the device is turned on in the forward direction, which will affect the overall performance of the device
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[0041] Such as figure 2 As shown, an embodiment of the present invention includes: an N well 3 formed by a P-type epitaxial layer or a P-type silicon substrate 1, an N+ injection layer 4 is formed in the N well, and a P-type epitaxial layer or a P In the type silicon substrate 1, three MOS structures with identical manufacturing parameters and identical device structures are arranged side by side in series (the number of MOS structures in series can be determined according to the actual needs of the device, and is not limited to three);
[0042] The MOS structure includes: a gate oxide layer 2 formed in a trench in a P-type epitaxial layer or a P-type silicon substrate 1, a polysilicon gate 5 is formed in the gate oxide layer 2, and a gate oxide layer 2 is formed on one side of the gate oxide layer 2. N+ injection layer 4;
[0043] The N+ injection layer 4 in the N well 3 is drawn out as the first connection terminal a of the device, and each polysilicon gate 5 is connected ...
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The invention discloses a trench gate type metal oxide semiconductor (MOS) tube which comprises an N trap which is formed by a P-shaped epitaxial layer or a P-shaped silicon substrate. An N+ injection layer is formed inside the N trap, and a plurality of MOS structures which are mutually connected in series are arranged in parallel on one side of the N trap. Each MOS structure comprises a gate oxide inside a trench in the P-shaped epitaxial layer or the P-shaped silicon substrate, wherein polysilicon gates are formed in the gate oxide, N+ injection layers are formed on one side of the gate oxide, each polysilicon gate is connected with the N+ injection layers of the MOS structure by the side, the N+ injection layer inside the N trap draws forth one connecting end of a device, and the N+ injection layers of the MOS structure which is far away from the N trap to the maximum degree draw forth the other connecting end of the device. The invention further discloses a manufacturing method of the trench gate type MOS tube. The trench gate type MOS tube is compared with a traditional high-voltage diode device, the function of high-voltage breakdown is achieved, and meanwhile, small forward conductive voltage can be obtained, large supply currents can be achieved.
Description
technical field [0001] The invention relates to the field of integrated circuits, in particular to a trench gate type MOS transistor. The invention also relates to a method for manufacturing the trench gate type MOS transistor. Background technique [0002] Currently, high-voltage diode devices are constructed of PN junctions or Schottky metal-semiconductor contacts. Due to the limited high-voltage withstand capability of Schottky diodes, high-voltage diodes generally use PN junction diodes, which are characterized in that the larger the reverse bias voltage is, the wider the required breakdown-resistant depletion layer width is, and the wider the depletion layer width is. Wider will lead to greater resistance when the device is turned on in the forward direction, which will affect the overall performance of the device. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a trench gate type MOS transistor which, com...
Claims
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IPC IPC(8): H01L27/088H01L21/8234
Inventor 王飞钟秋
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP