Compound semiconductor device and method of manufacturing the same
A semiconductor and compound technology, which is applied in the field of compound semiconductor devices and its manufacturing, can solve the problems such as difficult to obtain conductive characteristics
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no. 1 approach
[0028] The first embodiment will be described. figure 1 Is a cross-sectional view showing the structure of a GaN-based HEMT (compound semiconductor device) according to the first embodiment.
[0029] In the first embodiment, such as figure 1 As shown, a compound semiconductor stack structure 7 is formed on a substrate 1 (for example, a Si substrate). The compound semiconductor stacked structure 7 includes a buffer layer 2, an electron channel layer 3, a spacer layer 4, an electron supply layer 5 and a hole blocking layer 6. For example, the buffer layer 2 may be, for example, an AlN layer and / or an AlGaN layer with a thickness of about 10 nm to 2000 nm. For example, the electron channel layer 3 may be an i-GaN layer about 1000 nm to 3000 nm thick (without impurity doping intentionally). For example, the spacer layer 4 may be about 5nm thick i-Al 0.2 Ga 0.8 N layer (intentionally do not use impurity doping). For example, the electron supply layer 5 may be an n-type AlGaN (n-Al 0...
no. 2 approach
[0049] Next, the second embodiment will be explained. Figure 7 Is a cross-sectional view showing the structure of a GaN-based HEMT (compound semiconductor device) according to the second embodiment.
[0050] Compared with the first embodiment, in the second embodiment, the hole blocking layer 6 extends between the source electrode 11s and the drain electrode 11d in a plan view, and the hole blocking layer 6 is provided only under the gate electrode 11g in a plan view. The other structure is similar to the first embodiment.
[0051] In addition, similar to the first embodiment, the second embodiment thus configured succeeds in achieving the effects of suppressing an increase in on-resistance and a change in current path in the presence of the hole blocking layer 6.
no. 3 approach
[0053] Next, the third embodiment will be explained. Figure 8 Is a cross-sectional view showing the structure of a GaN-based HEMT (compound semiconductor device) according to the third embodiment;
[0054] Compared with the first embodiment, the gate electrode 11g is in Schottky contact with the compound semiconductor stacked structure 7. The third embodiment uses an insulating film 12 between the gate electrode 11g and the compound semiconductor stacked structure 7 to allow the insulating film 12 Used as a gate insulating film. In short, the opening 13g is not formed in the insulating film 12, and the MIS type structure is adopted.
[0055] In addition, similar to the first embodiment, the third embodiment thus configured successfully achieves the effects of suppressing the increase in on-resistance and the change in current path in the presence of the hole blocking layer 6.
[0056] The material used for the insulating film 12 is not particularly limited, and preferred examples t...
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Abstract
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