A light-emitting diode epitaxial wafer and its preparation method
A technology for light emitting diodes and epitaxial wafers, applied in the field of diodes, can solve the problems of easy migration, low electron mass, thermal expansion coefficient mismatch, etc., and achieve the effects of improving luminous efficiency, improving internal quantum efficiency, and reducing stress and defects
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Embodiment 1
[0029] see figure 1 Embodiment 1 of the present invention provides a light-emitting diode epitaxial wafer, which includes a substrate layer 1, a buffer layer 2 covering the substrate layer 1, an undoped GaN layer 3, an N-type contact layer 4, N-type extension layer 5 , multiple quantum well layer 6 and P-type layer 7 .
[0030] which, combined with figure 2 , N-type extension layer 5 is a superlattice structure formed alternately by several first sublayers a and several second sublayers b. The first sublayer a uses N-type doped Al x Ga 1-x N is used as a growth material, 0<x<1. The second sublayer b uses N-type doped GaN as a growth material.
[0031] Specifically, the concentration of Al in the first sublayer a of each layer is constant and the concentration of Al in the first sublayer a of each layer is different, from the side near the N-type contact layer 4 of the N-type extension layer 5 to the N-type On the side of the extension layer 5 close to the multi-quantum ...
Embodiment 2
[0037] see image 3 Embodiment 2 of the present invention provides a method for preparing a light emitting diode epitaxial wafer, which is suitable for the light emitting diode epitaxial wafer provided in embodiment 1. The method includes:
[0038] 201 : growing a buffer layer 2 on the substrate layer 1 .
[0039] Specifically, at a temperature of 625° C., a layer of GaN with a thickness of 30 nm is grown on the substrate layer 1 .
[0040] It is easy to know that before this step, the method further includes: cleaning the surface of the substrate layer 1 .
[0041] Specifically, the substrate layer 1 was exposed to H at 1300°C 2 The heat treatment was carried out under the atmosphere for 10 minutes, and the surface was cleaned.
[0042] 202: growing a non-doped GaN layer 3 .
[0043] Specifically, the temperature is increased to 1230° C., and a layer of non-doped GaN with a thickness of 2 μm is grown on the buffer layer 2 .
[0044] 203: growing the N-type contact layer 4....
Embodiment 3
[0060] An embodiment of the present invention provides a light-emitting diode epitaxial wafer. The structure of the epitaxial wafer is basically the same as that of the epitaxial wafer in Embodiment 1. Figure 4 and Figure 5 , the concentration of Al in several first sublayers a is the same, and the concentration of Al in each first sublayer a changes regularly and uniformly.
[0061] Specifically, the concentration of Al changes regularly and uniformly in one of the following ways: uniform increase (see Figure 4 ), decreasing uniformly (see Figure 5 ), increase uniformly and then decrease uniformly, decrease uniformly and then increase uniformly, increase uniformly and then decrease uniformly, finally increase uniformly, decrease uniformly, increase uniformly and finally decrease uniformly, increase uniformly first and decrease uniformly A uniform change is performed with a small change period, and a uniform change is performed with a uniform decrease and then a uniform ...
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