High-luminous-efficacy high-power light-emitting diode (LED) panel light

Abstract

The invention discloses a high-luminous-efficacy high-power LED panel light. The panel light comprises a base plate, LED light bars, a reflector, a light guide plate, a power source and a panel. The base plate is in a square structure, arc warps are arranged at the edges of the square structure, a reflecting film is plated on the base plate, the reflectivity of the reflecting film is improved gradually form the edges to the middle, and high-reflectivity reflecting films are plated on the edge warp surfaces of the square structure to form reflectors. The LED light bars are integrated and packaged on aluminum substrates and arranged in front of the reflectors on the periphery of the base plate. The light guide plate is made of materials with scattering particles mixed and with the reflectivity approaches to the LED chip reflectivity and arranged on the base plate, the edges of the of the light guide plate are closely attached to the LED chips, and the light guide plate is fixed on the base plate through the panel and screws. The high-luminous-efficacy high-power LED panel light is uniform in light emitting surface brightness, good in radiation effect and high in light emitting efficiency.

Description

technical field [0001] The invention relates to the field of LED lighting, in particular to a high-efficiency and high-power LED panel light. Background technique [0002] The first commercial LED came out in 1965, using GaAsP material, its structure is similar to ordinary diodes, its luminous efficiency is very low, and it can only emit red light of a few thousandths of a lumen. With the development of semiconductor doping technology, in 1985, Nishizawa in Japan used the liquid phase epitaxy method to prepare a heterostructure AIGaAs light-emitting diode with a brightness higher than that of the previous light-emitting diode, which was later called a high-brightness light-emitting diode. Research in the 1980s mainly focused on the P-N junction and improving the internal quantum efficiency. In the early 1990s, the research on the quaternary III-V semiconductor alloy material InGaAIP material was successful. Another huge breakthrough in the early 1990s was accomplished by N...

AI Technical Summary

Problems solved by technology

[0011] Aiming at the low luminous efficiency and poor heat dissipation of traditional LED panel lights, a high-efficiency and high-power LED panel light is designed. The present invention is realized through the following technical means:

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