Super junction device terminal protection structure
A terminal protection structure and terminal structure technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems that affect device performance or reliability, surface electric field breakdown, and limited improvement capabilities
Active Publication Date: 2016-06-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0004] The problem with this structure is that the silicon surface at the outer edge of the non-floating metal field plate 13, that is, the end of the field plate where the field plate extends to the periphery of the isolation structure, has a relatively high peak electric field, and surface electric field shocks are prone to occur. wear, affecting device performance or reliability
[0005] figure 2 Shown is another terminal protection structure, with figure 1 In comparison, the difference is that a plurality of P-type body rings 5 are added on the inside and outside of the trench 3, and the P-type body rings 5 can improve the breakdown voltage of the device to a certain extent, but for reducing the metal field plate 13 Extended surface peak electric field below tip, still limited ability to improve
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[0023] The super junction device terminal protection structure described in the present invention is as image 3 and Figure 4 shown ( Figure 4 is a top view), the terminal region 12 located in the N-type epitaxy 2 surrounds the cell region 11 surrounding the super junction device, and the terminal structure arranges a P-type body ring 5 and a plurality of P-type trenches in sequence from the direction away from the cell region 11 Groove ring 3 and field stop ring; the P-type groove ring 3 is arranged at intervals and formed by filling P-type polysilicon in the trench; P, N The P-type body ring 5 is located in the extension 2 on the top side of the P-type groove ring 3; the surface of the extension 2 on the terminal P-type groove ring 3 has a non-floating metal field plate 13, And the non-floating polysilicon field plate 8; the field termination ring 6 is located in the outermost circle of the termination region 12; the P-type body ring 5 at the junction transition region b...
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The invention discloses a terminal protection structure of a super junction device, which is suitable for the super junction device. The terminal protection structure is provided with an active area surrounding the super junction device and is provided with multiple groove rings, P-shaped body rings and a metal or polycrystalline silicon field plate. According to the terminal protection structure disclosed by the invention, by arranging the P-shaped body rings between the groove rings under the metal field plate in a crossing way and widening the width of the groove rings under the metal field plate, the electric field distribution under the edge of the metal field plate is optimized, a surface peak electric field is reduced, the transverse potential distribution is optimized, and the pressure resistance and the reliability of the super junction device are increased.
Description
technical field [0001] The invention relates to the field of semiconductor device design, in particular to a terminal protection structure of a super junction device. Background technique [0002] Super junction power device is a new type of power semiconductor device with rapid development and wide application. It is based on double-diffused metal oxide semiconductor (DMOS), by introducing a super junction (SuperJunction) structure, in addition to DMOS high input impedance, fast switching speed, high operating frequency, good thermal stability, simple drive circuit, easy to integrate In addition to other characteristics, it also overcomes the disadvantage that the on-resistance of DMOS increases with the breakdown voltage to the power of 2.5. At present, super-junction DMOS has been widely used in power supplies or adapters for consumer electronics products such as personal computers, notebook computers, netbooks, mobile phones, lighting (high-pressure gas discharge lamps)...
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IPC IPC(8): H01L29/78H01L29/06
Inventor 李东升
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP