Processing method for surface electrodes of three-dimensional quartz micro-mechanical structure

Abstract

The invention relates to the technical field of micro-mechanical processing of quartz, and particularly relates to a processing method for surface electrodes of a three-dimensional quartz micro-mechanical structure. The processing method comprises the steps of cleaning the surface of a metal film of the three-dimensional quartz micro-mechanical structure, spraying glue on the cleaned surface of the metal film to obtain an photoetching adhesive layer, then exposing and developing the photoetching adhesive layer, and finally hardening the photoetching adhesive layer; and corroding the metal film with a chemical corrosion method by taking the photoetching adhesive layer as a mask, and then removing the photoetching adhesive layer to accomplish the processing of the surface electrodes of the three-dimensional micro-mechanical structure. According to the processing method, wafers of different sizes and shapes can be sprayed with glue, and meanwhile, the side wall with a large depth-to-width ratio of the three-dimensional quartz micro-mechanical structure can be uniformly coated with glue. Through an ultrasonic glue spray manner, the uniformity of the photoetching adhesive layer on the three-dimensional micro-mechanical structure can be improved. As an ultrasonic cleaning procedure is added to the developing step, the adhesion of the photoetching adhesive layer to substrate materials of the three-dimensional quartz micro-mechanical structure is lowered, and thus a short-circuit situation during the electrode processing is completely eradicated.

Description

technical field [0001] The invention relates to the technical field of quartz micro-machining, in particular to a processing method for a surface electrode of a three-dimensional quartz micro-mechanical structure. Background technique [0002] Microelectromechanical systems often use crystal materials to process various microstructure devices, and substrate materials such as quartz glass or crystals, 7740 glass, and silicon wafers can generally be used. Its processing process mainly includes wafer cleaning, thin film deposition, photolithography, corrosion and so on. The quality of photolithography has a great influence on the performance of semiconductor devices, and is one of the key factors affecting the yield in production. The photolithography process mainly uses the photosensitive properties of the photoresist to transfer the structural pattern and electrode pattern from the photolithographic plate to the substrate. Photoresist is divided into dry film photoresist an...

AI Technical Summary

Problems solved by technology

Due to factors such as gravity and surface tension, it is difficult for the traditional coating method to cover the steep sidewall or step edge on the surface of the anisotropically etched trench, V-shaped groove, and through-groove structure, resulting in photoresist on the surface. The surface uniformity of the three-dimensional micro-mechanical structure is very poor, and complex electrode patterns cannot be processed