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high voltage device

A technology of internal devices and potentials, applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of reduced switching speed, increased drain-to-gate distance, high switching speed, etc.

Active Publication Date: 2016-01-20
GLOBALFOUNDRIES SINGAPORE PTE LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, low Rds on resulting in high switching speeds while high breakdown voltage increases voltage capability
[0003] Conventional techniques to achieve high breakdown voltage result in increased drain-to-gate distance
However, this comes with Rds on increases, thereby undesirably reducing switching speed

Method used

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Examples

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Embodiment Construction

[0015] Generally, embodiments relate to semiconductor devices or integrated circuits (ICs). In particular, some embodiments relate to high power devices. For example, high power devices include lateral double diffused (LD) transistors, such as metal oxide transistors (MOS). The high power device can be used as a switching voltage regulator for power management applications. LD transistors can be easily integrated into devices or ICs. For example, the device or IC can be incorporated into or used with consumer electronics products, especially portable consumer products such as cell phones, notebook computers and personal digital assistants (PDAs).

[0016] Figure 1a a cross-sectional view of a portion 100 of an embodiment of a display device, and Figure 1b The corresponding top view at gate height is shown. For example, the device is an IC. Other types of devices may also be used. As shown, the device includes a substrate 105 . For example, the substrate is a silicon ...

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Abstract

The method involves providing a substrate (105) e.g. silicon substrate, with a component region e.g. source region, gate region and drain region. The substrate is provided with gate layers located on an upper surface of the substrate. The gate layers are patterned for creating gates in the gate region. A field structure (160) is located on the upper surface of the substrate, where the structure surrounds the drain region. A connection to the structure is formed and coupled with potential, which distributes an electric field in the substrate between sides of the gates and the drain region. An independent claim is also included for a component comprising a substrate.

Description

technical field [0001] This invention relates to transistors with fast switching speed and high breakdown voltage. Background technique [0002] Lateral double diffused (LD) transistors have been widely used in high voltage applications. The performance of an LD transistor depends on the drain-to-source resistance (Rds on ) and breakdown voltage. For example, low Rds on resulting in high switching speeds while high breakdown voltage increases voltage capability. [0003] Conventional techniques to achieve high breakdown voltages result in increased drain-to-gate distances. However, this comes with Rds on increases, thereby undesirably reducing the switching speed. Contents of the invention [0004] A method of forming a device is presented. The method includes providing a substrate having a device region. The device region includes a source region, a gate region, and a drain region defined on the substrate. The substrate is prepared with a gate layer on the substr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/40H01L29/06
CPCH01L29/402H01L29/0653H01L29/1083H01L29/456H01L29/4933H01L29/665H01L29/66659H01L29/7823H01L29/7835
Inventor G·张P·R·维尔马B·朱
Owner GLOBALFOUNDRIES SINGAPORE PTE LTD