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A p-type silicon plus organic crystal double-sided heterojunction solar cell

A technology of solar cells and organic crystals, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as affecting the life of cells, and achieve the effect of reducing repeated pollution and improving photovoltaic efficiency

Active Publication Date: 2016-03-02
ZHEJIANG JINBEST ENERGY SECIENCE & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Because the formation of crystals is formed at high temperature, the doped film can be at high temperature or sub-high temperature, and the quality of CVD at medium temperature will affect the life of the entire cell

Method used

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  • A p-type silicon plus organic crystal double-sided heterojunction solar cell
  • A p-type silicon plus organic crystal double-sided heterojunction solar cell

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Embodiment Construction

[0012] The present invention will be further described below in conjunction with the accompanying drawings and embodiments, but not as a basis for limiting the present invention.

[0013] Example. A kind of p-type silicon plus organic crystal double-sided heterojunction solar cells, such as figure 1 As shown, the P-type silicon substrate P(Si), both sides of the P-type silicon substrate are provided with textured surfaces 6, and the front side of the P-type silicon substrate realizes gradient diffusion doping of phosphorus, and separates each gradient with an isolation layer I, Form ININ - Structure, weak phosphorous diffusion on the back of the P-type silicon substrate and deposition of P-type organic crystal BWB8, finally forming an INP structure. Number 5 is the SiN anti-reflection coating. The P-type silicon plus organic crystal double-sided heterojunction solar cells, the top layer of the N - The front electrode 3 is printed on the type doped layer and covered with an...

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Abstract

The invention discloses a P type silicon and organic crystal double-face heterojunction solar cell type which comprises a P type silicon substrate, wherein the front surface of the P type silicon substrate achieves gradient diffusion mixture of phosphorus, and each gradients is separated through separation layers I to form an ININ structure. Diffusion direct deposition P type silicon organic crystal BWB is not conducted on the back surface of the P type silicon substrate, and alternatively, weak phosphorus diffusion is conducted and then the deposition P type silicon organic crystal BWB is conducted to form an indium phosphide (INP) structure.

Description

technical field [0001] The invention relates to a double-sided solar cell, in particular to a P-type silicon plus organic crystal double-sided heterojunction solar cell. Background technique [0002] Under the energy crisis, the photovoltaic industry has developed rapidly. The development of photovoltaic theory and technology is gradually becoming mature, and the key to further promoting photovoltaic applications is to improve the photoelectric conversion efficiency of batteries and reduce battery costs. HIT (physically speaking, PIN junction) batteries on Si substrates have been vigorously developed in Sanyo Corporation of Japan. It is a "heterojunction" (HIT junction) battery in which a thin layer of amorphous Si is grown on crystalline Si. The process temperature is actually a medium temperature process. Although the conversion efficiency is slightly stronger, the life is short. Working under sunlight, it is one of the low-cost and high-efficiency batteries suitable for...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/48H01L51/42
CPCY02E10/549
Inventor 韩元杰李新富吴鹏飞张冰姚英
Owner ZHEJIANG JINBEST ENERGY SECIENCE & TECH