Al alloy film, wiring structure having Al alloy film, and sputtering target used in producing Al alloy film

A wiring structure, sputtering target technology, applied in sputtering plating, metal/alloy conductor, semiconductor/solid-state device manufacturing, etc., can solve the problems of Al alloy corrosion, low screen display quality, etc., and achieve excellent heat resistance Effect

Inactive Publication Date: 2013-04-24
KOBE STEEL LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, in addition to the above, there is a problem that the surface of the exposed Al alloy will be corroded under the immersion of the sodium chloride solution.
[0017] In addition, as another problem, when an Al film is used as an electrode wiring film, Al is very easily oxidized, and therefore, if there is no barrier metal layer, bump-like protrusions called hillocks will be formed on the surface of the Al film. , there will be problems such as low display quality of the screen

Method used

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  • Al alloy film, wiring structure having Al alloy film, and sputtering target used in producing Al alloy film
  • Al alloy film, wiring structure having Al alloy film, and sputtering target used in producing Al alloy film
  • Al alloy film, wiring structure having Al alloy film, and sputtering target used in producing Al alloy film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] In this embodiment, the following four types of samples in total were used as samples for corrosion evaluation, that is, samples (single-layer samples) in which an Al film was formed on a substrate; A sample of an ITO film (Al-ITO laminated sample); a sample in which an Al film, a high-melting-point metal film (Mo film or Ti film) and an ITO film are sequentially formed on a substrate from the substrate side (Al-high-melting-point metal- ITO laminated sample) to evaluate the corrosion resistance of sodium chloride solution. Moreover, heat resistance was evaluated about the Al-ITO laminated sample.

[0084] (Preparation of Al film monolayer sample)

[0085] By DC magnetron sputtering method (conditions: substrate = glass ("EagleXG" manufactured by Corning Corporation), atmospheric gas = argon, pressure = 2mTorr, substrate temperature = 25°C, target size = 4 inches, film formation power = 260W / 4 inch, film formation time = 100 seconds) to form Al films (film thickness ...

Embodiment 2

[0111] In this example, the Al films shown in Nos. 1 to 33 of Table 1 used in the above-mentioned Example 1 were used to produce: (iii) laminated samples: ITO films were sequentially formed on the substrate from the substrate side ( Bottom) and Al film (top) laminated sample (ITO-Al laminated sample); (iv) laminated sample: ITO film (bottom) and refractory metal film ( In the middle, a laminated sample of Mo film or Ti film) and Al film (top) (a laminated sample of ITO-refractory metal-Al); a laminated sample of (v): ITO is formed on the substrate in order from the substrate side Film (bottom), Al film (middle) and high-melting-point metal film (upper, Mo film or Ti film) laminated sample (ITO-Al-high-melting-point metal laminated sample), evaluated in the same manner as in Example 1 Corrosion resistance of sodium chloride solution.

[0112] Specifically, an ITO film (film thickness: 200 nm) was formed under the following conditions. That is, using a 4-inch ITO target, by DC...

Embodiment 3

[0126] In this example, using the Al films shown in Nos. 1 to 33 of Table 1 used in the above-mentioned Example 1, a laminated sample (Al-ITO) in which an Al film and an ITO film were sequentially formed on a substrate was produced. The ITO pinhole corrosion resistance (ITO pinhole corrosion density reduction effect) was investigated.

[0127] Specifically, by the DC magnetron sputtering method (conditions: substrate = glass ("EagleXG" of Corning Co., Ltd.), atmospheric gas = argon, pressure = 2mTorr, substrate temperature = 25 ° C, target size = 4 inches, the formation Film power = 260 W / 4 inches, film formation time = 100 seconds) formed an Al film (film thickness = 300 nm, balance: Al and unavoidable impurities) of the composition shown in Table 3 below.

[0128]In addition, the content of each element in the said Al film was calculated|required by the ICP emission analysis (induced coupling plasma emission analysis) method.

[0129] Then, heat treatment at 270° C. for 30 ...

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Abstract

The present invention provides an Al alloy film that, in a production step of a thin-film transistor substrate, reflective film, reflective anode, touchpanel sensor, or the like, can effectively prevent corrosion such as pinhole corrosion (black dots) or corrosion of the Al alloy surface when immersed in a sodium chloride solution, has superior corrosion resistance, is able to suppress hillock formation, and has superior heat resistance. The Al alloy thin film is used as a reflective film or a wiring film on a substrate, and contains 0.01-0.5 at% of Ta and / or Ti and 0.05-2.0 at% of a rare earth element.

Description

technical field [0001] The present invention relates to an Al alloy film suitable for use in a wiring film (including electrodes) and a reflective film for a display device and a touch panel sensor, a wiring structure having the Al alloy film, and a method for producing the Al alloy film A sputtering target, a thin film transistor having the Al alloy film, a reflective film, a reflective anode electrode for organic EL, a touch panel sensor, and more specifically, corrosion resistance to sodium chloride solution and pinhole corrosion resistance of a transparent conductive film, etc. Al alloy film excellent in corrosion resistance and heat resistance. Hereinafter, the Al alloy film used for the wiring film for thin film transistors and a liquid crystal display device will be mainly demonstrated, but the Al alloy film of this invention is not limited to this application. Background technique [0002] A liquid crystal display (LCD) used in various fields ranging from a small mo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/14C22C21/00G02F1/1368G09F9/30H01B1/02H01B5/02H01L21/28H01L21/285H01L21/3205H01L23/52H01L29/786
CPCC23C14/165C23C14/086H05K1/0298H01B1/023H01L23/53219H01L29/458C22C21/00H01L27/124C23C14/3414H01L2924/12044H01L2924/0002Y10T428/12542Y10T428/265Y10T428/31678H01L2924/00C23C14/14C23C14/34G02F1/1368
Inventor 奥野博行钉宫敏洋
Owner KOBE STEEL LTD
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