Spray head used in chemical vapor deposition process

A technology of chemical vapor deposition and chemical deposition, which is applied in the field of spray heads of chemical vapor deposition process, can solve the problems of low quality of epitaxial material layer, and the capacity and efficiency of chemical vapor deposition equipment cannot meet the requirements of the application, so as to reduce the possibility of Sex and shedding amount, reduced cleaning and maintenance, lessened the effect of vortex

Inactive Publication Date: 2013-05-01
BRILLIANT LIGHT TECH
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  • Abstract
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  • Claims
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Problems solved by technology

[0007] In practice, it is found that the quality of the epitaxial material layer formed by the existing chemical vapor deposition process is not high, and the productivity and efficiency of the chemical vapor deposition equipment cannot meet the application requirements.

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  • Spray head used in chemical vapor deposition process
  • Spray head used in chemical vapor deposition process
  • Spray head used in chemical vapor deposition process

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Embodiment Construction

[0029] Existing showerheads are usually made of stainless steel, and the temperature of the surface of the showerhead near the substrate is usually lower than 200 degrees Celsius. During the chemical vapor deposition process, a deposition layer will also be formed on the surface of the shower head near the substrate, but since the material of the surface of the shower head near the substrate is stainless steel, and the surface The temperature is very low, resulting in a relatively sparse and loose texture of the deposition layer formed on the surface. During the chemical vapor deposition process, the deposition layer formed on the surface of the shower head near the substrate side is easy to fall off from the surface. Dust particles are formed to contaminate the epitaxial material layer grown on the substrate and generate impurity defects. Therefore, after each chemical vapor deposition process is completed, a lot of cleaning and cleaning work must be carried out. Doing so af...

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Abstract

The invention provides a spray head used in a chemical vapor deposition process on a substrate. The spray head comprises a metal main body layer and an outer surface layer. The temperature when the metal main body layer is subjected to the chemical vapor deposition process is lower than 300 DEG C. The outer surface layer is positioned on the surface of one side of the metal main body layer closed to a substrate. When the outer surface layer is subjected to the chemical vapor deposition process, the temperature is higher than that of the metal main body layer. With the spray head provided by the invention, the quality of an epitaxial material layer formed with the chemical vapor deposition process is improved, and production capacity and efficiency of a chemical vapor deposition device are improved.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition (CVD), in particular to a shower head used in the chemical vapor deposition process. Background technique [0002] MOCVD (Metal-Organic Chemical Vapor Deposition) is a new type of vapor phase epitaxial deposition process developed on the basis of vapor phase epitaxial growth (VPE). It uses organic compounds of Group III and II elements and hydrides of Group V and VI elements as source materials for crystal growth, and deposits on the base in a thermal decomposition reaction method to grow various III-V, II - Thin-layer single-crystal materials of Group VI compound semiconductors and their multi-component solid solutions. [0003] The principle of the existing chemical vapor deposition process will be described below. Specifically, taking MOCVD as an example, please refer to figure 1 The schematic diagram of the structure of the existing chemical vapor deposition equipment is s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
CPCC23C16/455C23C16/45565C23C16/45572
Inventor 梁秉文陈勇叶芷飞
Owner BRILLIANT LIGHT TECH
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