Reaction chamber air inlet device for metal organic chemical vapor deposition (MOCVD) equipment

A metal-organic chemistry, vapor deposition technology, applied in the direction of chemical reactive gas, gaseous chemical plating, chemical instruments and methods, etc., can solve the problem of dense distribution of uniform pores or slits, waste of impurities and sources, increase Reaction and other issues, to achieve the effect of improving flexibility and versatility, convenient automatic control, and avoiding pre-reaction

Active Publication Date: 2015-05-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Claims
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Problems solved by technology

If the reaction gas is mixed evenly in advance, it is easy to achieve a reaction atmosphere with uniform concentration and uniformity of material components. At the same time, mixing in advance will increase the pre-reaction, and it is easy to generate waste of impurities and sources.
The currently used MOCVD equipment uses isolation before different reaction gases enter the reaction chamber. In order to achieve mixing uniformity, the uniform pores or slits are densely arranged, and the process is complicated.

Method used

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  • Reaction chamber air inlet device for metal organic chemical vapor deposition (MOCVD) equipment
  • Reaction chamber air inlet device for metal organic chemical vapor deposition (MOCVD) equipment

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Embodiment Construction

[0017] The present invention will be further described below in conjunction with the embodiments and with reference to the accompanying drawings. figure 1 , figure 2 It is a schematic diagram of a specific embodiment of the present invention, and it should be understood that the drawings of the present disclosure focus on the structural features according to an embodiment of the present invention, and these drawings are not intended to show every single component in the device. see figure 1 , figure 2 As shown, the present invention provides a reaction chamber intake device for metal organic chemical vapor deposition equipment, comprising:

[0018] A cylinder 01, which is used as the side wall of the top plate of the reaction chamber; a water-cooled gas uniform plate 02, which is made in the cylinder 01; an upper cover plate 03, which is fixed on the cylinder 01 Above, an air inlet chamber 04 is formed between the upper cover plate 03, the water-cooled gas uniform plate 0...

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Abstract

A reaction chamber air inlet device for metal organic chemical vapor deposition (MOCVD) equipment includes a cylinder body, a water cooling air uniform-distributing plate manufactured inside the cylinder body, an upper cover plate fixed on the cylinder body and forming an air inlet chamber with the water cooling air uniform-distributing plate, and an air separating device fixed on the upper cover plate and dividing the air inlet chamber into at least two air inlet chambers or communicating the two air inlet chambers. The reaction chamber air inlet device realizes diversity and flexibility of air inlet manner in the MOCVD reaction chamber, improves mixing uniformity of components and avoids serious pre-reaction.

Description

technical field [0001] The invention relates to a device for preparing III-V compound semiconductors, in particular to a reaction chamber inlet device for metal organic chemical vapor deposition equipment. Background technique [0002] Metal-organic chemical vapor deposition equipment, referred to as MOCVD equipment, is an equipment for the epitaxial preparation of compound semiconductor materials. Due to its high-quality epitaxial crystals, good stability, and steep interfaces, it is widely used in the production of optoelectronic and microelectronic materials, especially in the LED industry. most. The uniform gas mixing device of the MOCVD reaction chamber is the core design technology of the equipment. Different types of gases enter the reaction chamber from the top plate of the reaction chamber, and react and deposit on the substrate surface to form an epitaxial layer. The concentration uniformity of the reaction gas and the reaction generation The degree of impurity de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/14C30B25/08C23C16/455
Inventor 冉军学胡强胡国新梁勇熊衍凯王军喜曾一平李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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