Organic electroluminescence device and preparation method thereof
An electroluminescence device and a luminescence technology, applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low luminous efficiency and achieve low cost, improved luminous efficiency, and simple operation.
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[0028] The embodiment of the present invention further provides a method for preparing the above-mentioned organic electroluminescent device, comprising the following steps:
[0029] Step S01, providing a spherical glass substrate:
[0030] Take a spherical glass substrate, and clean the glass substrate;
[0031] Step S02, preparing an anti-reflection layer:
[0032] Forming an anti-reflection layer on the inner surface of the spherical glass substrate by vacuum evaporation;
[0033] Step S03, preparing the cathode layer:
[0034] forming a cathode layer on the inner surface of the antireflection layer by vacuum evaporation;
[0035] Step S04, preparing an organic functional layer:
[0036] forming an organic functional layer on the inner surface of the cathode layer by vacuum evaporation;
[0037] Step S05, preparing the anode:
[0038] An anode is formed on the inner surface of the organic functional layer by vacuum evaporation to obtain an organic electroluminescent d...
Embodiment 1
[0057] Embodiment 1 of the present invention prepares an organic electroluminescent device, comprising the following steps:
[0058] The hemispherical glass substrate with an inner diameter of 5 mm and a thickness of 4 mm was ultrasonically cleaned with pure water, acetone, ethanol, etc. for 10 minutes;
[0059] Put the cleaned glass substrate into the metal cavity of the vacuum coating equipment, and successively vapor-deposit an anti-reflection layer with a thickness of 30nm, made of ZnS, and a cathode with a thickness of 20nm, made of Ag;
[0060] Then put the hemispherical glass substrate with the cathode evaporated into the organic vacuum cavity, and successively evaporate the electron transport layer with a thickness of 40nm, and the material is a (Bphen:Cs) mixture, and the thickness is 10nm, and the material is a hole blocking layer of Bphen , thickness is 40nm, material is TCTA:Ir(ppy) 3 The luminescent layer, the thickness is 40nm, and the material is the hole trans...
Embodiment 2
[0063] The method for preparing an organic electroluminescent device according to Embodiment 2 of the present invention comprises the following steps:
[0064] The hemispherical glass substrate with an inner diameter of 5 mm and a thickness of 4 mm was ultrasonically cleaned with pure water, acetone, ethanol, etc. for 13 minutes;
[0065] Put the cleaned glass substrate into the metal cavity of the vacuum coating equipment, successively evaporate the thickness to 20nm, and the material is MoO 3 The anti-reflection layer, the thickness is 20nm, and the material is the negative electrode of Ag;
[0066] Then put the hemispherical glass substrate with the cathode evaporated into the organic vacuum cavity, and successively evaporate the electron transport layer with a thickness of 40nm, and the material is a (Bphen:Cs) mixture, and the thickness is 10nm, and the material is a hole blocking layer of Bphen , thickness is 40nm, material is TCTA:Ir(ppy) 3 The luminescent layer, the ...
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Abstract
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