Processing method of multiple electrostatic discharge protection device

Abstract

The invention discloses a processing method of a multipath electrostatic discharge (ESD) protector. The processing method of the multipath ESD protector comprises that N through holes are formed in a first base material which comprises a first conducting layer, a second conducting layer and a first insulating layer located between the first conducting layer and the second conducting layer; the N through holes are filled with conducting materials; pattern processing is carried out on the second conducting layer; pattern processing is carried out on the first conducting layer and / or blind grooves penetrating through the first conducting layer to the first insulating layer are machined on the first conducting layer, and a first resin layer is arranged on the first conducting layer; a protective layer is arranged on the first resin layer, N / 2 blind holes penetrating from the protective layer to the first insulating layer are formed in the protective layer; the N / 2 blind holes are filled with slurry; the protective layer is peeled from the first resin layer; and a protective upper body is arranged on the first resin layer. By means of the processing method, manufacturing cost of the ESD protector can be lowered, and safety of the ESD protector can be improved.

Description

technical field [0001] The invention relates to the technical field of electronic device processing and manufacturing, in particular to a processing method for a multi-channel electrostatic discharge protection device. Background technique [0002] With the continuous development of integrated circuit technology, the size of transistors has been reduced to submicron or even deep submicron stage. The reduction of the physical size of the device has greatly improved the integration of the circuit, but the reliability of the highly integrated device has also followed. ESD (electro-static discharge, electrostatic discharge) is one of the most important causes of failure of electronic equipment and components. This is mainly because, as the size of components shrinks, for example, the thickness of the gate oxide layer of field effect elements gradually becomes thinner. Although this change can greatly improve the working efficiency of the circuit, it may make the circuit more fr...

AI Technical Summary

Problems solved by technology

The ESD protection device in the prior art uses the reverse breakdown principle of the PN junction to achieve the purpose of electrostatic protection, and it uses a semiconductor manufacturing process. Therefore, this type of ESD protection device often requires a higher manufacturing cost to achieve Ultra-small parasitic capacitance and leakage current (for example, achieve a parasitic capacitance of less than 0.2pf and a leakage current of less than 100nA)

In addition, when the current passing through this type of ESD protection device is too large, it may cause the ESD device to burst and form an open circuit

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