Chemical vapor deposition reactor or epitaxial layer growth reactor and support device thereof

Abstract

A chemical vapor deposition reactor or an epitaxial layer growth reactor comprises a reaction chamber; at least one substrate bearing rack and a support device for supporting the substrate bearing rack are disposed in the reaction chamber; the substrate bearing rack comprises a first surface and a second surface; the second surface of the substrate bearing rack is provided with at least one recessed part recessing inwards; the support device comprises a main shaft part, a supporting part which is connected with one end of the main shaft part, extends out along the periphery of the main shaft part, and comprises a supporting surface, and a plugging part which is connected with the main shaft part, and extends to a height along a direction towards the first surface of the substrate bearing rack; the plugging part of the support device can be separatedly plugged into the recessed part, so as to allow the substrate bearing rack to be placed on the support device and to be supported by the support device. The substrate bearing rack of the invention can realize balanced and reliable rotation during substrate processing process.

Description

technical field [0001] The present invention relates to the manufacture of semiconductor devices, in particular to a device for growing epitaxial layers or performing chemical vapor deposition on substrates such as substrates. Background technique [0002] During the production process of growing epitaxial layers or performing chemical vapor deposition on substrates such as substrates, the design of the reactor is critical. Reactors in the prior art come in a variety of designs, including: horizontal reactors, in which the substrates are mounted at an angle to the incoming reactant gases; planetary rotating horizontal reactors, In this reactor, the reaction gas is passed through the substrate horizontally; and in the vertical reactor, when the reaction gas is injected downward on the substrate, the substrate is placed on the substrate carrier in the reaction chamber and Relatively high speed rotation. This high-speed rotating vertical reactor is one of the most commerciall...

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Problems solved by technology

[0004] However, in the actual process, it is difficult for the aforementioned reactor to keep the substrate carrier 300 on the high-speed rotating main shaft 400 and make the two rotate together only by friction (for example: slipping due to insufficient friction). Solving this deficiency by an additional holding device will increase the complexity of the system; in addition, due to the limitation of the diameter of the main shaft 400, it is difficult to ensure that the substrate carrier 300 is always balanced during the deposition process. During the process, the center of gravity loses balance and swings, so that the epitaxial layer of the obtained substrate grows unevenly; moreover, due to the close fit between the main shaft wall 482 and the wall of the recessed part 390, in the substrate processing process, usually a high temperature environment , the main shaft 400 will generate thermal expansion, and the thermal expansion coefficient of the main shaft 400 is higher than that of the substrate carrier 300, the recessed part 390 will be broken due to the thermal expansion of the main shaft 400, and eventually the entire substrate carrier 300 will be cracked ; Finally, during the deposition process, the rotational speed of the spindle 400 is usually inconsistent with the rotational speed of the substrate carrier 300, and the two have a certain deviation, which makes it impossible to accurately measure the position of the substrate in the reactor, and then cannot accurately measure the substrate temperature and further control the temperature of the substrate

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