Unlock instant, AI-driven research and patent intelligence for your innovation.

Additive for acid texturing of diamond-wire-cutting polycrystalline silicon slices and application method thereof

A diamond wire cutting, polycrystalline silicon wafer technology, applied in chemical instruments and methods, crystal growth, post-processing details, etc.

Active Publication Date: 2013-06-05
瑞纳太阳能科技(义乌)有限公司
View PDF5 Cites 52 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no report on additives and usage methods specifically for acid texturing of diamond wire cut polycrystalline silicon wafers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Additive for acid texturing of diamond-wire-cutting polycrystalline silicon slices and application method thereof
  • Additive for acid texturing of diamond-wire-cutting polycrystalline silicon slices and application method thereof
  • Additive for acid texturing of diamond-wire-cutting polycrystalline silicon slices and application method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Embodiment 1 provides a comparative example, for not applying the conventional method of making wool of additive of the present invention:

[0047] Take the following steps:

[0048] 1) Prepare acidic texturing solution: under stirring, mix 2L of hydrofluoric acid with a concentration of 49%, 8L of nitric acid with a concentration of 65-68%, and 5L of deionized water;

[0049] 2) Texturing: immerse the diamond wire-cut polysilicon wafer in the above acidic texturing solution for texturing, and the texturing temperature is 7 o C, the texturing time is 90s.

[0050] The surface reflectance of the diamond wire cut polysilicon wafer after texturing is 27.0%. Figure 4 The scanning electron microscope pictures of the suede on the surface of the obtained diamond wire cut polysilicon wafer are given, and it can be known from the picture that the suede with uneven size and distribution is obtained.

Embodiment 2

[0052] Take the following steps:

[0053] a) Preparation of additives: under stirring, dissolve 1.0g of polyvinyl alcohol (commercial grade 0588) and 1.5g of polyethylene glycol (molecular weight 400) in 97.5g of deionized water (that is, in the prepared additive, The weight percentage of the polyvinyl alcohol is 1%, the weight percentage of the polyethylene glycol is 1.5%);

[0054] b) Preparation of acidic texturing solution: under stirring, mix 1.5L of hydrofluoric acid with a concentration of 49%, 8L of nitric acid with a concentration of 65-68% and 5.5L of deionized water, and then add 75mL of the above-mentioned additives , stir evenly (that is: in the prepared acidic texturing solution, the weight percentage of the hydrofluoric acid is 5%, the weight percentage of the nitric acid is 40%, the weight percentage of the additive 0.4%);

[0055] c), texturing: immerse diamond wire cut polysilicon wafers in the above acidic texturing solution for texturing, and the texturin...

Embodiment 3

[0058] Take the following steps:

[0059] a) Preparation of additives: under stirring, dissolve 2.0g of polyvinyl alcohol (commercial grade 1799) and 0.5g of polyethylene glycol (molecular weight 1000) in 97.5g of deionized water (that is, in the prepared additive, The weight percentage of the polyvinyl alcohol is 2%, the weight percentage of the polyethylene glycol is 0.5%);

[0060] b) Preparation of acidic texturing solution: under stirring, mix 2.5L of hydrofluoric acid with a concentration of 49%, 8.5L of nitric acid with a concentration of 65-68% and 4L of deionized water, and then add 130mL of the above-mentioned additives , stir evenly (that is: in the prepared acidic texturing solution, the weight percentage of the hydrofluoric acid is 8%, the weight percentage of the nitric acid is 42%, the weight percentage of the additive 0.7%);

[0061] c), texturing: immerse diamond wire cut polysilicon wafers in the above texturing liquid for texturing, and the texturing tempe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
reflectanceaaaaaaaaaa
reflectanceaaaaaaaaaa
reflectanceaaaaaaaaaa
Login to View More

Abstract

The invention provides an additive for acid texturing of diamond-wire-cutting polycrystalline silicon slices and an application method of the additive in the acid texturing process of diamond-wire-cutting polycrystalline silicon slices. The additive for acid texturing comprises the components of polyving akohol, polyethylene glycol and deionized water and is applied to the acid texturing process of diamond-wire-cutting polycrystalline silicon slices. Due to the fact that the additive is applied to the acid texturing process of diamond-wire-cutting polycrystalline silicon slices, reflectivity of the textured diamond-wire-cutting polycrystalline silicon slices is approximately 6% lower than that of the conventionally textured diamond-wire-cutting polycrystalline silicon slices. The additive for acid texturing is non-toxic and non-corrosive, preparation and application processes are simple, and practical application value is high.

Description

technical field [0001] The invention relates to an acid texturing additive and a preparation method and a use method thereof, in particular to an additive for acid texturing of diamond wire-cut polycrystalline silicon wafers and a method for using the acid texturing process of diamond wire-cut polycrystalline silicon wafers. [0002] Background technique [0003] At present, the cutting of crystalline silicon wafers used in the photovoltaic industry mainly adopts the mortar multi-wire cutting technology, but this technology has problems such as low cutting process efficiency, high cutting processing costs, and large discharge pollution of waste mortar after cutting. In contrast, solid abrasive diamond wire saw cutting (abbreviated as diamond wire cutting) technology has received more and more attention due to its advantages of high cutting efficiency, low cutting processing cost and clean environment, and is expected to become Future directions of material slicing technolog...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/24C30B33/10
Inventor 周波轩徐苏凡武敏莉
Owner 瑞纳太阳能科技(义乌)有限公司