Recovery method of gyrocompass automatic navigation (GaN)-based epitaxial wafer substrate

Abstract

The invention discloses a recovery method of a gyrocompass automatic navigation (GaN)-based epitaxial wafer substrate and belongs to the technical field of semiconductors. The recovery method of the GaN-based epitaxial wafer substrate comprises the following steps: putting the GaN-based epitaxial wafer substrate into a vacuum reaction chamber; and injecting reducing gas and catalytic gas to the reaction chamber so that a reduction reaction of the GaN of the GaN-based epitaxial wafer substrate can occur in vacuo. Due to the facts that the GaN-based epitaxial wafer substrate is put into the vacuum reaction chamber and the reducing gas and the catalytic gas are injected to the reaction chamber so that the reduction reaction of the GaN of the GaN-based epitaxial wafer substrate can occur, the GaN of the GaN-based epitaxial wafer substrate can be reduced to simple substance gallium and ammonia and separated from the substrate. The recovery method of the GaN-based epitaxial wafer substrate has the advantages that no physical damage and chemical damage exist under a high-temperature environment and the integrity of the substrate is maintained. Moreover, the recovery method of the GaN-based epitaxial wafer substrate further has the advantages of being simple in principle, controllable in process, and capable of enabling the decomposition speed rate of the GaN to be higher, and therefore the speed of the recovery of the substrate is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for recycling GaN-based epitaxial wafer substrates. Background technique [0002] With the rapid development of optoelectronic industries such as light-emitting diodes and photodetectors, the production capacity of GaN-based epitaxial wafers based on substrates such as aluminum oxide or silicon carbide has increased unprecedentedly. When growing GaN-based epitaxial wafers, the appearance or photoelectric parameters of some epitaxial wafers cannot meet the requirements of subsequent production, and they need to be scrapped or downgraded. Since the substrate material accounts for a considerable proportion in the cost of epitaxial wafers, the industry is emerging to recycle the substrates of scrapped epitaxial wafers. [0003] Traditional GaN-based epitaxial wafer substrate recovery methods generally include dry etching and wet etching. The dry etching method gener...

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Problems solved by technology

[0005] In the prior art, when the substrate of the GaN-based epitaxial wafer is recovered by dry etching, due to the plasma bias, certain damage will be formed on the substrate of the epitaxial wafer; the recovery of GaN-based epitaxial wafer by wet etching method When the substrate is used, because the GaN of the epitaxial wafer is relatively stable, it is difficult to obtain a high etching rate by wet etching, which makes it difficult to increase the productivity of removing GaN and recovering the substrate.

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