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Formation method of barrier layer and semiconductor device

A barrier layer and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of low barrier layer quality, high resistivity, poor barrier layer adhesion, etc., to improve Device Performance, Adhesion Enhancement, Effect of Copper Metal Layer Reduction

Active Publication Date: 2015-03-11
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0004] However, the barrier layer formed by the prior art has poor adhesion, high resistivity, and the quality of subsequent copper filling on the barrier layer is low

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  • Formation method of barrier layer and semiconductor device
  • Formation method of barrier layer and semiconductor device
  • Formation method of barrier layer and semiconductor device

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Embodiment Construction

[0027] It can be seen from the background art that the barrier layer formed in the prior art has poor adhesion and high resistivity, and the subsequent filling of copper on the barrier layer is of low quality.

[0028] For this reason, the inventor of the present invention studies this, and finds that: the barrier layer is formed between the dielectric layer and the metal layer (copper), and is used to prevent copper metal from diffusing in the medium, and a single cladding layer cannot take care of both the dielectric layer and the metal layer. The adhesion of the layer is thus replaced by the barrier layer of the multilayer stack structure.

[0029] The prior art usually uses a TaN layer and a Ta metal layer formed on the surface of the TaN layer, or a TiN layer and a Ti metal layer formed on the surface of the TiN layer as a barrier layer. The reason for using a two-layer stack structure is: TaN layer or TiN layer The adhesion to the dielectric layer is better and the adhes...

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Abstract

The invention relates to a formation method of a barrier layer and a semiconductor device, wherein the formation method of the barrier layer includes that a semiconductor substrate is provided, a dielectric layer is formed on the surface of the semiconductor substrate, and an opening is formed inside the dielectric layer. First barrier layers are formed in the side wall of the opening and the bottom of the opening. An angled ion implantation process is utilized to conduct nitrogen ion implantation to the first barrier layer of the side wall of the opening. Second barrier layers are formed on the surface of the first barrier layer with the nitrogen ion implantation and the surface of the first barrier layer which is at the bottom of the opening. Products formed with the formation method of the barrier layer are good in electrical properties. The semiconductor device is good in electrical properties.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a barrier layer and a semiconductor device. Background technique [0002] With the development of IC technology, the size of devices is getting smaller and smaller, and the influence of interconnect RC delay on device turn-on speed is increasing, far exceeding the impact of gate delay, so reducing RC interconnect delay has become the focus of attention. On the one hand, people introduce the use of copper with low resistivity to replace aluminum with high resistivity to reduce the interconnection resistance, and apply it to the process of 0.25μm and below; on the other hand, people introduce low dielectric constant materials to reduce the number of metal interconnections. capacitance between. [0003] However, compared with aluminum interconnects, copper has a higher diffusion rate and is easier to diffuse through the dielectric layer, which endange...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/3105H01L23/532
Inventor 鲍宇
Owner SEMICON MFG INT (SHANGHAI) CORP
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