A method of manufacturing a light emitting diode
A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as shedding, and achieve the effects of increasing brightness, reducing the area that blocks light, and reducing line width.
Inactive Publication Date: 2015-11-25
西安利科光电科技有限公司 +1
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Problems solved by technology
[0005] The purpose of the present invention is to provide a method for manufacturing a light-emitting diode to solve the problems of fracture, damage, and shedding of the p-type auxiliary electrode due to factors such as chemical corrosion and mechanical damage during processing and packaging.
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[0025] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0026] Such as Figure 8 As shown, the present invention provides a method for manufacturing a light-emitting diode, comprising the following steps:
[0027] Step S10: providing a substrate, on which an n-type semiconductor layer, an active layer and a p-type semiconductor layer are sequentially formed;
[0028] Step S11: forming a transparent conductive layer on the p-type semiconductor layer;
[0029] Step S12: etching the transparent conductive layer to form a first groove;
[0030] Step S13: forming a p-ty...
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The invention provides a manufacturing method of a light emitting diode. Due to the fact that a p type auxiliary electrode is partially or wholly arranged in a transparent conducting layer, metal of a bottom contact layer can be effectively prevented from being corroded by chemical substances in the external world, the height of the p type auxiliary electrode above the transparent conducting layer is also reduced, and problems of generation of damage, dropping, fracture, and the like caused by the fact that the p type auxiliary electrode is subjected to external force hardly happen. Specifically, when the height of the p type auxiliary electrode is smaller than that of a groove in the transparent conducting layer or smaller than the sum of the height of the groove and the height of an insulation protective layer, the p type auxiliary electrode is to be wholly wrapped by the insulation protective layer, and thus reliability of a component is greatly increased. Accordingly, line width of a metal auxiliary electrode can be also reduced, thus an area sheltering from light emitting is decreased, and the brightness of a light emitting diode chip is increased to a certain degree.
Description
technical field [0001] The invention relates to the field of light-emitting diodes, in particular to a method for manufacturing a light-emitting diode in which a p-type auxiliary electrode is fully or partially embedded in a transparent conductive layer. Background technique [0002] A light emitting diode (LED) is a semiconductor diode that emits light when the pn junction is under forward bias. A typical vertical light emitting diode may include a substrate, an n-type semiconductor layer, an active layer (light-emitting layer), a p-type semiconductor layer, an n-type electrode and a p-type electrode. LED has many advantages such as small size, light weight, firm structure, strong shock and earthquake resistance, long life, environmental protection and no pollution, and has become one of the most valued light source technologies in recent years. [0003] Taking the current mainstream front-mount GaN-based LED chips based on sapphire substrates as an example, since sapphire...
Claims
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IPC IPC(8): H01L33/00H01L33/38
Inventor 姚禹缪炳有陈起伟邓觉为
Owner 西安利科光电科技有限公司