N-type organic thin film transistor, bi-carrier field effect transistor and preparation method thereof
A field effect transistor and organic thin film technology, which is applied in the field of N-type organic thin film transistors, achieves the effects of being beneficial to large-area production, cheap and simple.
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Embodiment 1
[0092] [Example 1] Upper contact type N-type organic thin film transistor
[0093] Preparation of silk aqueous solution
[0094] Firstly, prepare an aqueous solution containing 10 wt% sodium carbonate, heat it to boiling, add dry cocoons (natural silk) and boil for 30 minutes to 1 hour to remove sericin (sericin) on the outer layer of silk. Then, put it into deionized water for washing to wash away the lye attached to the outer layer of silk. After drying, the refined silk protein, namely fibroin, can be obtained.
[0095] Then, put the refined silk protein into 20ml of 85wt% phosphoric acid (H 3 PO 4 ) solution, stirred until dissolved. Then, put the phosphoric acid solution dissolved in silk protein into a dialysis membrane (Spectra / Por3 dialysis membrane, molecular weight cutoff = 14000) and dialyze with water for 3 days to remove excess phosphate. By changing the volume of water used for dialysis and the number of dialysis times, in addition to removing phosphate radi...
Embodiment 2
[0115] [Example 2] Down-contact N-type organic thin film transistor
[0116] Such as Figure 5A As shown, a substrate 30 is provided, and a gate 31 and a gate dielectric layer 32 are sequentially formed on the substrate 30 . In this embodiment, the materials and preparation methods of the substrate 30 , the gate electrode 31 and the gate dielectric layer 32 are the same as those in the first embodiment. In addition, in this embodiment, the thickness of the gate 31 is about 80 nm, and the thickness of the gate dielectric layer 32 is about 400 nm.
[0117] Next, if Figure 5B As shown, a patterned metal layer is evaporated on the gate dielectric layer 32 to serve as the source 34 and the drain 35 by using the same process conditions as in the embodiment 1 for forming the gate. In this embodiment, the material of the source electrode 34 and the drain electrode 35 is gold, and its thickness is about 70 nm.
[0118] Next, if Figure 5C As shown, a buffer layer 5 is formed on t...
Embodiment 3
[0121] [Example 3] Upper contact bicarrier field effect transistor
[0122] Such as Figure 6A As shown, a substrate 30 is provided, and a gate 31 and a gate dielectric layer 32 are sequentially formed on the substrate 30 . In this embodiment, the materials and preparation methods of the substrate 30 , the gate electrode 31 and the gate dielectric layer 32 are the same as those in the first embodiment. In addition, in this embodiment, the thickness of the gate 31 is about 80 nm, and the thickness of the gate dielectric layer 32 is about 400 nm.
[0123] Next, if Figure 6B As shown, a P-type organic semiconductor layer 7 is formed on the gate dielectric layer 32 by using the same process conditions as in the embodiment 1 for forming the buffer layer. In this embodiment, the material of the P-type organic semiconductor layer 7 is pentaphenyl ring, and its thickness is about 10 nm.
[0124] Next, if Figure 6C As shown, an N-type organic semiconductor layer 9 is formed on t...
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