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A process method for realizing strippable sidewall

A technology of wet etching and oxide film, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as polysilicon damage, and achieve the effect of improving yield and production process

Active Publication Date: 2015-08-26
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] According to the problem in the prior art that stripping the sidewall is easy to cause damage to polysilicon, the present invention provides a solution by depositing two different types of oxide films, after the normal dry etching of the sidewall, using a wet process Different etching rates for different types of oxide films can strip off the silicon nitride layer on the side wall without causing damage to the underlying silicon, which improves the yield of the product

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  • A process method for realizing strippable sidewall
  • A process method for realizing strippable sidewall
  • A process method for realizing strippable sidewall

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Embodiment Construction

[0030] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0031] figure 1 The schematic diagram of the structure before the sidewall etching of the present invention is shown, including a polysilicon gate 1, a silicon nitride layer 2, a second oxide layer 3, a first oxide layer 4 and a silicon substrate 5, and the polysilicon gate 1 is located on the silicon substrate. On the upper surface of the substrate 5, the first oxide layer 4 covers the upper surface of the silicon substrate 5, the second oxide layer 3 covers the upper surface of the first oxide layer 4, and the silicon nitride layer covers the upper surface of the second oxide layer 3 .

[0032] Figure 1~5 It is a flowchart of a process method for realizing a strippable sidewall of the present invention, including the following steps:

[0033] S1. Deposit a layer of first oxide film 4 on th...

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Abstract

The invention relates to a CMOS (complementary metal oxide semiconductor) device technology, in particular to a process method of peeling sidewall. The process method includes depositing oxidation films and silicon nitride substance of two different types, processing ordinary sidewall dry etching on the silicon nitride substance, and then etching oxidation films of different types with wet processing. Silicon at the bottom is not damaged when the silicon nitride substance of the sidewall is peeled; and meanwhile, tubular defects are not prone to being formed in the following metal silicide processing, yield rate of products is increased, and production technology of silicon chip is improved.

Description

technical field [0001] The invention relates to a CMOS semiconductor device technology, in particular to a method for realizing a strippable side wall process. Background technique [0002] With the development of CMOS semiconductor device technology and proportional size reduction, the node depth of the device is also scaled down, and the thermal budget is becoming more and more sensitive to node depth and lateral diffusion, where different implanted elements respond differently to the same thermal process . [0003] In order to achieve the same lateral diffusion length, sidewall processes with different widths can be used for NMOS and PMOS, which requires the use of strippable sidewall processes. [0004] The traditional strippable sidewall process is to directly use phosphoric acid to strip the sidewall after depositing the silicon nitride layer on the surface of the silicon wafer. However, phosphoric acid is highly corrosive, and it is easy to cause damage to silicon d...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311
Inventor 景旭斌
Owner SHANGHAI HUALI MICROELECTRONICS CORP