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Solid-liquid interdiffusion bonding structure of thermoelectric module and fabricating method thereof

A technology of diffusion bonding and thermoelectric modules, which is applied in the manufacture/processing of thermoelectric devices, the material of the junction lead wires of thermoelectric devices, and the manufacturing tools, etc., which can solve the problems of high temperature of the bonding process and damage to the bonding interface.

Active Publication Date: 2013-06-26
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the temperature of the bonding procedure of this method must be as high as 450 degrees Celsius or more
When the bonding procedure is completed and cooled to room temperature, the difference in thermal expansion coefficient between the thermoelectric material and the metal electrode will generate considerable thermal stress, which in turn will cause damage to the bonding interface

Method used

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  • Solid-liquid interdiffusion bonding structure of thermoelectric module and fabricating method thereof
  • Solid-liquid interdiffusion bonding structure of thermoelectric module and fabricating method thereof
  • Solid-liquid interdiffusion bonding structure of thermoelectric module and fabricating method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0042] The bonding method of the thermoelectric module of Example 1 is in the P-type thermoelectric element (Bi 0.5 Sb 1.5 Te 3 ) is sequentially plated with a nickel layer with a thickness of 4 microns and a silver layer with a thickness of 10 microns. In addition, a silver layer with a thickness of 2 microns and a tin layer with a thickness of 4 microns were sequentially plated on the surface of the copper electrode plate. Afterwards, the thermoelectric element formed with the nickel layer and the silver layer and the copper electrode plate formed with the silver layer and the tin layer are stacked together, and a heating process is performed in a vacuum or an inert gas environment. The temperature of the heating program is 300 degrees centigrade, and the time is 30 minutes. At this time, the tin layer on the copper electrode plate will melt and quickly carry out interface reaction with the silver layer on the copper electrode plate and the silver layer on the thermoelectr...

example 2

[0045] The joining method of the thermoelectric module of example two is in the N-type thermoelectric element (Bi 2 Te 2.55 Se 0.45 ) is sequentially plated with a tin layer with a thickness of 2 microns, a nickel layer with a thickness of 4 microns, and a silver layer with a thickness of 10 microns. In addition, a silver layer with a thickness of 2 microns and a tin layer with a thickness of 4 microns were sequentially plated on the surface of the copper electrode plate. Afterwards, the thermoelectric element formed with the tin layer, the nickel layer and the silver layer and the copper electrode plate formed with the silver layer and the tin layer are stacked together, and a heating process is performed in a vacuum or an inert gas environment. The temperature of the heating program is 300 degrees centigrade, and the time is 30 minutes. At this time, the tin layer on the copper electrode plate will melt and quickly carry out interface reaction with the silver layer on the ...

example 3

[0048] The bonding method of the thermoelectric module of Example 3 is first in the P-type thermoelectric element (Pb 0.5 sn 0.5 The surface of Te) is sequentially plated with a tin layer with a thickness of 2 microns, a nickel layer with a thickness of 4 microns and a silver layer with a thickness of 10 microns. In addition, a silver layer with a thickness of 2 microns and a tin layer with a thickness of 4 microns were sequentially plated on the surface of the copper electrode plate. Afterwards, the thermoelectric element formed with the nickel layer and the silver layer and the copper electrode plate formed with the silver layer and the tin layer are stacked together, and a heating process is performed in a vacuum or an inert gas environment. The temperature of the heating program is 300 degrees centigrade, and the time is 30 minutes. At this time, the tin layer on the copper electrode plate will melt and quickly carry out interface reaction with the silver layer on the cop...

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Abstract

A solid-liquid interdiffusion bonding structure of a thermoelectric module and a fabricating method thereof are provided. The structure is characterized in that, at least one intermetallic compound is formed in the thermoelectric component and the electrode plate. The method includes coating a silver, nickel, or copper layer on surfaces of a thermoelectric component and an electrode plate, and then coating a low-melting-point tin layer. A thermocompression treatment is performed on the thermoelectric component and the electrode plate, such that the melted tin layer reacts with the silver, nickel, or copper layer to form a silver-tin intermetallic compound, a nickel-tin intermetallic compound, or a copper-tin intermetallic compound. After cooling, the thermoelectric component and the electrode plate are bonded together. The thermoelectric module forms a higher-melting-point intermetallic compound due to complete reaction of the low-melting-point tin layer and the silver, nickel, or copper layer is partially left, and therefore as a great characteristic, after joint, an application temperature of the thermoelectric module can be higher than a joint temperature.

Description

technical field [0001] The invention relates to a solid-liquid diffusion bonding structure of a thermoelectric module and a manufacturing method thereof. Background technique [0002] The thermoelectricity that can be transmitted or converted by a single thermoelectric element is very limited. Therefore, metal electrodes are generally used to connect multiple sets of thermoelectric elements to form a thermoelectric module, so as to provide sufficient thermoelectric transmission power. [0003] Traditionally, soldering is used for bonding thermoelectric elements and electrodes. For example in US5,429,680, US5,441,576, US5,817,188, US6,103,967 and US3,079,455. The above-mentioned prior art uses tin or solder alloy with a low melting point and a thickness of several centimeters or more for bonding at about 300 degrees Celsius. After bonding, the tin or solder alloy with a low melting point still partially remains. The thermal stress generated by this method of solder joint is...

Claims

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Application Information

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IPC IPC(8): H01L35/34H01L35/10
CPCB23K20/026B23K20/16B23K20/233B23K20/24B23K2101/36B23K2103/08B23K2103/12B23K2103/18B23K35/262B23K35/3006B23K35/302B23K35/3033B23K35/004B23K35/007B32B15/01H10N10/817H10N10/852H10N10/01B23K35/00
Inventor 赖宏仁黄振东朱旭山庄东汉简朝棋
Owner IND TECH RES INST
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