Insulated gate bipolar transistor gate driving push-pull circuit
A technology of bipolar transistors and push-pull circuits, which is applied in the field of gate drive push-pull circuits of insulated gate bipolar transistors, and can solve the problems of large turn-on voltage drop of MOS transistors, poor reliability of push-pull circuits, and poor ability to suppress IGBT short-circuit current, etc. problem, to achieve the effect of small drive circuit loss, improve work reliability, and improve overall reliability
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[0055] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.
[0056] Figure 5 It is a schematic diagram of the structure of the IGBT drive push-pull circuit with effective gate clamping and negative voltage shutdown of the present invention, which is composed of a drive chip, an IGBT gate drive resistor, and a gate drive push-pull circuit. The gate drive push-pull circuit is composed of a front-stage push-pull circuit, a level conversion circuit, and a rear-stage push-pull circuit. The front-stage push-pull circuit, the level conversion circuit and the rear-stage push-pull circuit share the positive and negative power supplies of the secondary side of the drive chip. The output of the driver chip is connected to the front-stage push-pull circuit, the output of the front-stage push-pull circuit is connected to the level conversion circuit, the output of the level conversion circuit is connected to the r...
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