Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Monolithic Power Amplifier

A power amplifier, a single-chip technology, applied in the direction of power amplifiers, etc., can solve the problems of difficult to achieve high power output of the amplifier, unstable operation of the circuit, and difficulty in meeting broadband requirements, etc., to achieve high power output, improve stability and broadband The effect of performance and wide working frequency band

Active Publication Date: 2015-12-02
成都雷电微力科技股份有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

An important and difficult point in the design of power amplifiers is the stability of the circuit, because there is a high gain and noise in the lower frequency band, so it is easy to cause low-frequency oscillation, so that the entire circuit cannot work stably
[0004] In order to stabilize the circuit, it is usually necessary to add a matching circuit between the stages of the multi-stage amplifier. The traditional matching circuit is a resistance-capacitance coupling circuit. This coupling circuit can stabilize the circuit with relatively small resistance and capacitance, but This kind of coupling circuit needs to occupy a large circuit area, and the matching circuit is a narrowband structure with poor broadband performance. It is difficult to meet the broadband requirements of the matching circuit in the W-band power amplifier, and it is difficult to achieve high power output of the amplifier.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Monolithic Power Amplifier
  • Monolithic Power Amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] as attached figure 1 , attached figure 2 As shown, in the single-chip power amplifier of this embodiment, an input matching circuit 2 is integrated on the single chip 1, the input end of the input matching circuit 2 is connected to an external signal input source, and its output end is connected in series with a four-stage transistor amplifier 3 , output matching and power synthesis circuit 4 and output to the outside, and the four-stage transistor amplifier 3 includes a first-stage transistor amplifier 3.1, a second-stage transistor amplifier 3.2, a third-stage transistor amplifier 3.3, and a fourth-stage transistor amplifier 3.3 cascaded in turn. Amplifier 3.4, the first-stage transistor amplifier 3.1 and the second-stage transistor amplifier 3.2 are cascaded through a matching circuit, and the second-stage, third-stage, and fourth-stage transistor amplifiers are cascaded in turn through the integrated intermediate-stage power division and matching circuit 7 , the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of integrated circuit design and manufacture, in particular to a single chip power amplifier which is widely used for various kinds of active radar components of W wave band millimeter waves and communication systems. An input match circuit is integrated on a single chip, the input end of the input match circuit is connected with an external signal input source, the output end of the input match source is sequentially connected with a four-level transistor amplifier, an output match circuit and a power synthesis circuit in series and then outputs outside, wherein the four-level transistor amplifier comprises a first level transistor amplifier, a second level transistor amplifier, a third level transistor amplifier, and a fourth level transistor amplifier. The single chip power amplifier can be widely used for the fields of various kinds of active radar components of W wave band and millimeter wave communication systems. The single chip power amplifier has the advantages of being wide in working frequency range, stable in full frequency range property, and capable of effectively decreasing an area of a chip and loss, and achieving high power output of the chip.

Description

technical field [0001] The invention relates to the technical field of integrated circuit design and manufacture, in particular to a single-chip power amplifier widely used in W-band various active radar components and millimeter wave communication systems. Background technique [0002] The power amplifier is a key component of high-sensitivity receivers in the fields of satellite communication, radar communication, etc. Through the power amplifier, signal amplification and power output are realized. [0003] Monolithic microwave integrated circuit (MMIC) has become the best choice for designing and manufacturing millimeter-wave power amplifier integrated circuits because of its low circuit loss, low noise, wide frequency bandwidth, large dynamic range, high power, high additional efficiency, and strong resistance to electromagnetic radiation. One of the best choices. W-band power amplifiers using MMIC technology are widely used in military and civilian applications such as...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/20
Inventor 管玉静袁野黄枭祺
Owner 成都雷电微力科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products