Method for setting exposure conditions in photoetching
A technology of exposure conditions and photolithography, which is applied in the direction of microlithography exposure equipment, photolithography exposure device, etc., can solve the problems of mutual difference, CD difference, difference, etc., and achieve the effect of improving yield rate and reducing rework rate
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[0022] The following introduces some of the multiple possible embodiments of the present invention, which are intended to provide a basic understanding of the present invention, and are not intended to confirm the key or decisive elements of the present invention or limit the scope of protection. It is easy to understand that according to the technical solution of the present invention, without changing the essential spirit of the present invention, those of ordinary skill in the art can propose other alternative implementations. Therefore, the following specific embodiments and drawings are only exemplary descriptions of the technical solutions of the present invention, and should not be regarded as all of the present invention or as a limitation or limitation to the technical solutions of the present invention.
[0023] In this article, the lithography conditions include CD parameters and Overlay parameters. The CD parameter refers to the CD of the wafer that mainly affects lith...
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