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Light-emitting diode substrate, processing method thereof and light-emitting diode

A technology of light-emitting diodes and processing methods, which is applied in the directions of electrical components, circuits, semiconductor devices, etc., to achieve the effects of improving light extraction efficiency, reducing voids or electrostatic discharge, and increasing light scattering

Inactive Publication Date: 2013-07-10
KUNSHAN ZHONGCHEN SILICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in practice, due to various loss mechanisms, the photons generated in the active region of LEDs cannot 100% propagate to the outside world.

Method used

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  • Light-emitting diode substrate, processing method thereof and light-emitting diode
  • Light-emitting diode substrate, processing method thereof and light-emitting diode
  • Light-emitting diode substrate, processing method thereof and light-emitting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Example 1: In figure 1 A sapphire substrate 100 is shown in FIG. This sapphire substrate 100 has a plurality of upper three lower hexagonal pyramids 102 . Each upper and lower hexagonal pyramid 102 is a structure composed of a hexagonal pyramid 104 and a triangular pyramid 106 positioned on the hexagonal pyramid 104, wherein each surface of the hexagonal pyramid 104 belongs to the same direction family, triangular pyramid Each surface of body 106 also belongs to the same orientation family. Moreover, the ratio of the projected area of ​​each triangular pyramid 106 to the projected area of ​​a single upper three lower hexagonal pyramid 102 must be greater than 0 and less than 0.5. When the ratio of the projected area of ​​the single triangular pyramid 106 to the projected area of ​​the single upper three lower hexagonal pyramid 102 is greater than 0.5, voids or electrostatic discharge (ESD) may be caused due to the impact on epitaxy. In this embodiment, the ratio of t...

Embodiment 2

[0041] Embodiment 2: the top of the triangular pyramid 106 in the drawing of embodiment 1 is a point, but the present invention is not limited thereto, the top of the triangular pyramid 106 also can have a plane, as embodiment 2 image 3 . exist image 3Among them, the sapphire substrate 300 of this embodiment is the same as that of Embodiment 1 and has a plurality of upper three lower hexagonal pyramids 302, and each upper three lower hexagonal pyramids 302 are composed of a hexagonal pyramid 304 and a triangular pyramid 306 Structure. The difference between this embodiment and embodiment 1 is as image 3 The top of the triangular pyramid 306 is shown as a plane 308 , and a mask (not shown) may exist on the plane 308 . As for other structural parameters, reference can be made to Embodiment 1, so details are not repeated here.

Embodiment 3

[0042] Example 3: Figure 4 It is a schematic cross-sectional view of a light-emitting diode of this embodiment. exist Figure 4 A sapphire substrate 100 of Embodiment 1 is shown in (see for details figure 1 ). On the sapphire substrate 100, a first semiconductor layer 400, a light emitting layer 402, a second semiconductor layer 404, a first ohmic electrode 406 in contact with the first semiconductor layer 400, and a second ohmic electrode 406 in contact with the second semiconductor layer 404 are generally arranged. Mu electrode 408. However, Figure 4 The sapphire substrate 100 in also can use sapphire substrate 300 instead (see for details image 3 ).

[0043] In this embodiment, the first semiconductor layer 400 , the light emitting layer 402 and the second semiconductor layer 404 may be III-V semiconductors, such as gallium nitride semiconductors. As for the first ohmic electrode 406 and the second ohmic electrode 408, for example, they are oxides containing nicke...

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Abstract

The invention discloses a light-emitting diode substrate, a processing method of the light-emitting diode substrate and a light-emitting diode. The processing method of the light-emitting diode substrate comprises the following steps of using at least one wet etch manufacturing procedure to carry out etch on a sapphire substrate to form a plurality of triangle-upper hexagon-lower pyramid bodies on the surface of the sapphire substrate, wherein each triangle-upper hexagon-lower pyramid body is of a structure which is composed of a hexagonal pyramid body and a triangular pyramid body arranged on the hexagonal pyramid body, manufacturing the sapphire substrate which is composed of the plurality of triangle-upper hexagon-lower pyramid bodies into a light transmitting surface, and therefore improving scatter of light through nine surfaces of each triangle-upper hexagon-lower pyramid body, further improving light transmitting efficiency of the light-emitting diode substrate. In addition, due to the fact that a ratio between the projection area of the triangular pyramid body of each triangle-upper hexagon-lower pyramid body and the triangle-upper hexagon-lower pyramid body is smaller than 0.5, the problems that defects of epitaxy cause hollow holes or electrostatic discharge (ESD) and the like can be reduced.

Description

technical field [0001] The invention belongs to the field of semiconductors, and in particular relates to a light-emitting diode substrate, a processing method thereof, and a light-emitting diode using the substrate. Background technique [0002] A light-emitting diode is a light-emitting component made of compound semiconductors, which can convert electrical energy into light and release it through the combination of electrons and holes. Light-emitting diodes are cold-emitting, so they have the advantages of low power consumption, no warm-up time, long component life, and fast response. In addition, they are small in size, impact-resistant, suitable for mass production, and easy to meet the needs of applications. It can be made into very small form or array form components. [0003] In order to make light-emitting diodes have greater application space and prospects in the future, how to improve the luminous brightness of light-emitting diodes is one of the researches that ...

Claims

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Application Information

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IPC IPC(8): H01L33/20H01L33/00
Inventor 曾柏翔林博文彭俊彦徐文庆
Owner KUNSHAN ZHONGCHEN SILICON CO LTD
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