Preparation method of long-narrow trench mask plate for vapor plating

A mask plate, narrow and long technology, which is applied in the field of preparation of long and narrow trench mask plates for evaporation, can solve the problems of not being able to reach the substrate, and achieve the effects of improving service life, increasing film formation rate, and saving costs

Inactive Publication Date: 2013-07-17
KUN SHAN POWER STENCIL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] The technical problem to be solved by the present invention is that in the existing OLED manufacturing technology, the organic particles cannot reach the substrate due to the shielding of the opening wall during evaporation, and a new method for preparing a long and narrow trench mask for evaporation is provided. The mask prepared by this method has the advantages of high utilization rate of organic materials, high film formation rate, long service life of the mask and cost saving

Method used

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  • Preparation method of long-narrow trench mask plate for vapor plating
  • Preparation method of long-narrow trench mask plate for vapor plating
  • Preparation method of long-narrow trench mask plate for vapor plating

Examples

Experimental program
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Effect test

Embodiment 1

[0036]A long and narrow trench mask for evaporation, such as figure 2 As shown, the thickness is 50 μm, and the shape is a quadrilateral metal plate, including the ITO surface 4 and the evaporation surface 5 that are in contact with the indium tin oxide (ITO) surface. The mask has a long and narrow groove that runs through the ITO surface and the evaporation surface Groove, the size of the opening 1 of the narrow groove on the ITO surface is smaller than the size of the opening 2 on the evaporation surface. Invar alloy is selected as the mask material, and the double-sided etching process is adopted. image 3 It is a schematic diagram of the cooperation between the mask plate and the ITO surface.

[0037] Etch from the ITO side of the mask 4 to form as figure 2 Opening 1 on the ITO surface of the middle mask, the depth of opening 1 is 15 μm, and the lateral dimension is 70 μm, etched from the evaporation surface 5 of the mask to form figure 2 Opening 2 on the evaporation...

Embodiment 2

[0040] A long and narrow trench mask for evaporation, with a thickness of 35 μm and a shape of a quadrilateral metal plate, including two surfaces of an ITO surface in contact with an indium tin oxide (ITO) surface and an evaporation surface, and the mask has a through The long and narrow grooves on the ITO surface and the vapor deposition surface, the size of the opening of the long and narrow groove on the ITO surface is smaller than the size of the opening on the vapor deposition surface.

[0041] The long and narrow groove mask for evaporation is a quadrilateral nickel-cobalt alloy metal plate, the opening depth of the ITO surface of the mask is 10 μm, and the lateral dimension is 50 μm, and the groove-shaped opening on the evaporation surface coincides with the center of the ITO surface opening of the mask , and the centers of the two openings are symmetrical, and the walls of the openings on the evaporation surface have a certain concave arc, forming an evaporation angle ...

Embodiment 3

[0044] A long and narrow groove mask for evaporation, with a thickness of 100 μm and a shape of a quadrilateral metal plate, including two surfaces of an ITO surface and an evaporation surface, and the mask has a long and narrow groove penetrating the ITO surface and the evaporation surface, The size of the opening of the narrow trench on the ITO surface is smaller than the size of the opening on the evaporation surface.

[0045] The long and narrow groove mask for evaporation is a quadrilateral nickel-cobalt alloy metal plate. The opening depth of the ITO surface of the mask is 35 μm, and the lateral dimension is 70 μm. coincident and symmetrical to the center of the opening on the ITO surface. The walls of the openings on the evaporation surface have a certain concave curvature, forming an evaporation angle of 30°. Through the separate control of the etching time on the ITO surface and the evaporation surface, a small opening on the ITO surface with a depth of 35 μm and a w...

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Abstract

The invention relates to a preparation method of a long-narrow trench mask plate for vapor plating, and aims to mainly solve the technical problem that organic particles cannot reach a substrate due to shadowing of a mask plate aperture wall during vapor plating in the existing OLED (organic light-emitting diode) manufacturing technologies. The preparation method of a long-narrow trench mask plate for vapor plating provided in the invention adopts a double-side etching process, and the method includes the steps of: conducting etching on the ITO (indium tin oxide) surface of the mask plate material to form ITO surface long-narrow trench apertures (1); performing etching on the vapor plating surface of the mask plate to form long-narrow trench apertures (2), making the long-narrow trench apertures (2) coincide with the ITO surface long-narrow trench apertures (1) in centers, and bringing the long-narrow trench apertures (2) into central symmetry; designing the aperture walls with certain concave curvature, thus forming vapor plating taper angles of 30-50 degrees; and performing etching to form the mask plate with gourd apertures formed by the intercommunicated small size long-narrow trench apertures (1) on the ITO surface and large size long-narrow trench apertures (2) on the vapor plating surface. According to the technical scheme, the problem is well solved. Thus, the method can be used in the industrial production of organic light-emitting diodes.

Description

[0001] technical field [0002] The invention relates to a method for preparing a long and narrow trench mask for evaporation required in the OLED manufacturing process. Background technique [0003] Generally, an OLED device is an emissive display device that emits light by electrically exciting a fluorescent organic compound. The OLED device can be regarded as a passive matrix OLED (PMOLED) device or an active matrix OLED (AMOLED) device according to a driving manner of N×M pixels that can be arranged in a matrix. Compared with PMOLED devices, AMOLED devices are suitable for large-sized displays due to their low power consumption and high resolution. [0004] Depending on the direction in which light is emitted from the organic compound, the OLED device can be a top-emitting OLED device, a bottom-emitting OLED device, or a top and bottom-emitting OLED device. Top-emitting OLED devices emit light in the opposite direction to the substrate on which the pixels are disposed ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/04C23F1/02
Inventor 魏志凌高小平郑庆靓
Owner KUN SHAN POWER STENCIL
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