A kind of preparation method of crystalline silicon solar cell

Abstract

The invention discloses a method for preparing a crystalline silicon solar cell. The method comprises the following steps of: forming suede on the front surface of a silicon wafer; performing P ion implantation on the front surface of the silicon wafer; performing heavy doping on the back surface of the silicon wafer, and annealing the silicon wafer; removing a P diffusion layer and phosphorosilicate glass from a heavy doping region; forming an anti-reflection film on the front surface of the silicon wafer; forming a back electrode and an aluminum back field on the back surface of the silicon wafer; and forming a front electrode on the front surface of the silicon wafer. The solar cell prepared by using the method has an efficient p-n junction which is obtained by ion implantation, and has a good back gettering effect; and photoelectric conversion efficiency is remarkably improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing a p-n junction crystalline silicon solar cell by means of ion implantation. Background technique [0002] The core part of the crystalline silicon solar cell is the p-n junction. In the prior art, POCl3 thermal diffusion is usually used to diffuse P into the silicon wafer to obtain the p-n junction. However, it is difficult to control the doping concentration during the implementation of the above method, and the depth uniformity of the p-n junction is not good, so it is difficult to improve the photoelectric conversion efficiency of the solar cell. Ion implantation technology can implant various doping substances into the base material, and can also achieve precise control over the depth and concentration of the implantation. Therefore, many companies have applied ion implantation technology to the preparation process of crystalline silicon solar cell...

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem that phosphorus gettering on the back of the silicon wafer cannot be achieved when high-quality p-n junctions are prepared by ion implantation technology, the present invention adopts single-side diffusion technology to diffuse high-concentration phosphorus on the back of the silicon wafer to realize the phosphorous gettering on the back of the silicon wafer. Getter

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