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Thin film transistor, manufacturing method thereof, array substrate and display device

By using a protective layer to isolate the gate electrode and the active layer in the thin film transistor, the problem of reduced carrier mobility caused by copper diffusion is solved and the product yield is improved.

Active Publication Date: 2013-07-31
BOE TECHNOLOGY GROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The defect in the prior art is that the gate electrode and source / drain electrode made of copper or copper alloy are easy to diffuse into the active layer due to the active copper, so the copper is easy to contaminate the active layer, thus affecting the flow rate of the carriers. mobility, which eventually leads to product defects

Method used

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Embodiment Construction

[0059] In order to avoid the pollution of the active layer by using copper or copper alloy as the gate electrode and improve the yield rate of products, the invention provides a thin film transistor and its manufacturing method, an array substrate and a display device. In this technical solution, the gate electrode metal layer is isolated from the active layer by using the first group of protective layers, which prevents the change of carrier mobility caused by copper diffusion into the active layer, thereby improving the yield of the product.

[0060] Such as figure 1 and figure 2 as shown, figure 1 It is a schematic structural diagram of an array substrate including a thin film transistor of the present invention, figure 2 for figure 1 A partially enlarged view of the gate electrode of a thin film transistor, the array substrate provided by the present invention includes a plurality of thin film transistors arranged in an array, figure 1 The thin film transistor in the...

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Abstract

The invention relates to the technical field of thin film transistor display, and discloses a thin film transistor, a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises gate electrodes, an active layer, source / drain electrodes, and a gate insulation layer positioned between the gate electrodes and the active layer, wherein each gate electrode comprises a gate electrode metal layer and a first group of protective layers; the first group of protective layers are positioned between the gate electrode metal layers and the gate insulation layer for isolating the active layer from the gate electrode metal layer; and the gate electrode metal layers are made of copper or copper alloys. With the adoption of the technical scheme, the gate electrode metal layer is isolated from the active layer by the first group of protective layers, so that the active layer is prevented from being polluted due to copper diffusion, and the yield of a product is increased greatly.

Description

technical field [0001] The present invention relates to the technical field of thin film transistor display, in particular to a thin film transistor, a manufacturing method thereof, an array substrate and a display device. Background technique [0002] Among the flat panel display devices, Thin Film Transistor Liquid Crystal Display (TFT-LCD) has the characteristics of small size, low power consumption, relatively low manufacturing cost and low radiation, and occupies a dominant position in the current flat panel display market. leading position. [0003] Oxide Thin Film Transistor (OTFT) has the advantages of ultra-thin, light weight, and low power consumption. -Emitting Diode (OLED for short) application provides the possibility, the organic light emitting diode is more colorful and the image is clearer than the existing thin film transistor. [0004] The existing array substrate preparation process includes sputtering to form a gate electrode on the base substrate, depo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/43H01L21/336
CPCH10D30/673H10D64/62H10D30/6739H10D99/00H10D30/6704H10D30/6746H10D30/6732H10D30/6745H10D30/6755H10D62/83H10D64/665
Owner BOE TECHNOLOGY GROUP CO LTD