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Mode-locking outer cavity semiconductor laser

A technology of semiconductors and lasers, applied in the field of mode-locked external cavity semiconductor lasers, can solve the problems of increased pulse width, low diffraction efficiency of blazed gratings, and decreased output power of mode-locked external cavity semiconductor lasers, so as to reduce the impact and ensure time Effects of Domain Output Properties

Inactive Publication Date: 2013-07-31
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, for special lasers such as mode-locked external cavity semiconductor lasers, blazed gratings are not the best choice for wavelength tuning components, because the diffraction efficiency of blazed gratings is not high, and the loss of light is large, resulting in mode-locking External cavity diode laser output power drops
Moreover, the blazed grating will narrow the linewidth of the lasing spectrum, which will increase the pulse width of the output optical pulse of the mode-locked external cavity semiconductor laser, which will affect the time-domain output characteristics of the mode-locked external cavity semiconductor laser.

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  • Mode-locking outer cavity semiconductor laser

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[0021] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0022] Please refer to figure 1 , figure 1 It is a schematic structural diagram of a mode-locked external cavity semiconductor laser according to an embodiment of the present invention. The mode-locked external cavity semiconductor laser sequentially includes a semiconductor device 11, a collimating lens 12, a wavelength tuning element 13, a focusing lens 14, and a mirror 15 along its optical path. . Among them: the semiconductor device 11 is used to provide optical gain to the incident beam and output the divergent beam; the collimator lens 12 is used to collimate the divergent beam input by the semiconductor device 11 into a parallel beam, and couple the parallel beam to the wavelength tuning In the element 13; the wa...

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Abstract

The invention discloses a mode-locking outer cavity semiconductor laser which comprises a semiconductor device, a collimating lens, a wavelength tuning element, a focusing lens and a reflector along an optical path of the mode-locking outer cavity semiconductor laser sequentially. The mode-locking outer cavity semiconductor laser adopts an equilateral dispersing prism as the wavelength tuning element; compared with a blazed grating, the equilateral dispersing prism has lower optical loss, so that higher optical output power is ensured; the lasing spectral width of the mode-locking outer cavity semiconductor laser cannot be pressed narrowly by the equilateral dispersing prism, so that the pulse width of an output optical pulse cannot be increased; and the equilateral dispersing prism is particularly applicable to wavelength tuning of the mode-locking laser.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, in particular to a mode-locked external cavity semiconductor laser with a novel wavelength tuning element. Background technique [0002] The mode-locked external cavity semiconductor laser adopts mode-locking and external cavity feedback technology, so that the semiconductor laser outputs a periodic ultrashort pulse light sequence. Such lasers have important application prospects in optical sampling, optical time division multiplexing, time-resolved spectroscopy, and optical coherence tomography. In more applications, it is necessary to make the output wavelength of the laser variable, and the component used for wavelength tuning is usually a blazed grating. However, for special lasers such as mode-locked external cavity semiconductor lasers, blazed gratings are not the best choice for wavelength tuning components, because the diffraction efficiency of blazed gratings is no...

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Application Information

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IPC IPC(8): H01S5/14H01S5/065
Inventor 吴剑金鹏王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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