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Thin film transistor

A thin film transistor, oxide semiconductor technology, applied in transistors, semiconductor devices, electrical components, etc., can solve problems such as affecting the conductivity of the active layer, and achieve the effect of good conductivity

Inactive Publication Date: 2013-08-14
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the IGZO material will be affected by the process conditions and its characteristics will be changed, especially the effect of the oxygen atom hole (Oxygen vacancy) on the conductivity, thus affecting the conductivity of the active layer

Method used

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Embodiment Construction

[0013] Such as figure 1 As shown, the thin film transistor 100 includes a substrate 10 , an active layer 20 and a gate 30 disposed on the substrate 10 .

[0014] The substrate 10 can be made of materials such as glass, quartz, silicon wafer, polycarbonate, polymethyl methacrylate, metal foil or paper.

[0015] The active layer 20 is provided on the upper surface of the substrate 10 . In this embodiment, the active layer 20 is formed by stacking the first oxide semiconductor layer 21 and the second oxide semiconductor layer 23, and the first oxide semiconductor layer 21 and the second oxide semiconductor layer 23 are made of different materials. production. The first oxide semiconductor layer 21 and the second oxide semiconductor layer 23 can be made of indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO), indium tin oxide (ITO ), gallium tin oxide (GTO), aluminum tin oxide (ATO), titanium oxide (TiOx) or tin oxide (Z...

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Abstract

A thin film transistor includes a baseplate, as well as an active layer and a grid electrode both arranged on the baseplate, wherein the active layer includes a channel layer, as well as a source electrode and a drain electrode respectively arranged on two opposite sides of the channel layer and electrically connected with the channel layer; the grid electrode is positioned above or below the channel layer; a grid insulating layer is arranged between the grid electrode and the channel layer; the active layer is composed of at least two layers of oxide semiconductors in a stacked manner; and every two adjacent layers of oxide semiconductors are made of different materials, so that influence degree on the oxide semiconductor layers by the manufacture procedure condition can be balanced, and further, better conductivity of the active layer is ensured.

Description

technical field [0001] The invention relates to a thin film transistor. Background technique [0002] With the advancement of process technology, thin film transistors have been widely used in displays to meet the requirements of thinning and miniaturization of displays. Thin-film transistors generally include components such as a gate and an active layer. The active layer includes a drain, a source, and a channel layer. The thin-film transistor changes the conductivity of the channel layer by controlling the voltage of the gate, so that the gap between the source and the drain form an on or off state. [0003] Generally, the active layer of a thin film transistor usually has a one-layer structure, and IGZO is used as its fabrication material. However, the IGZO material will change its characteristics due to the influence of the process conditions, especially the effect of the oxygen atom vacancy (Oxygen vacancy) on the conductivity, thereby affecting the conductivity of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/06
Inventor 曾坚信
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD
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