Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Improvement on structure of crystal growing furnace for pulling alumina single crystal and method for growing alumina single crystal

A structure improvement and crystal growth furnace technology, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of reducing the service life of the crucible, complex device structure, and deterioration of the crucible, so as to suppress the generation of bubbles, Excellent effect with little deterioration

Active Publication Date: 2013-08-21
SHANGHAI ADVANCED SILICON TECH CO LTD
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This patent has several obvious shortcoming: 1 uses vacuum pumping device, makes device structure complicated
2 The use of a higher concentration of oxygen will lead to the deterioration of the crucible and reduce the service life of the crucible, thus increasing the cost
3 The effect of suppressing air bubbles described in the patent needs to be further improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Improvement on structure of crystal growing furnace for pulling alumina single crystal and method for growing alumina single crystal
  • Improvement on structure of crystal growing furnace for pulling alumina single crystal and method for growing alumina single crystal
  • Improvement on structure of crystal growing furnace for pulling alumina single crystal and method for growing alumina single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 7 and 8

[0051] The oxygen concentration in the crystal growth process affects the bubbles in the crystal. When the concentration is too low, such as lower than 0.1%, more bubbles will be generated.

[0052] The rotation speed will also affect the quality of the crystal ingot. When the rotation speed and the pulling speed are too high, the crystal quality will be deteriorated. The best rotation speed for drawing c-plane white gemstones in the present invention is 0.5-3rpm, and the pulling speed is 0.5-2mm / hour.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an improvement on structure of crystal growing furnace for pulling alumina single crystal and method for growing alumina single crystal, and the structure improvement is that a cylinder cavity body is in a thermal insulator, the cylinder type cavity is placed with a crucible, and the external part of the thermal insulator is provided with a heating wire. The structure improvement is characterized in that the upper side part of the thermal insulator has at least one opening, and the middle part of the upper part of the thermal insulator is provided with an opening, and oxygen and inactive gas flow into the cavity from the opening, and the gas flows out from the opening, and the opening is the port for the seed crystal to arrive at the solution. The mixing gas composed of oxygen and inactive gas is used in the growing process, and the concentrations of oxygen in the mixing gas at different steps are different; and a purifying process is added. The invention can effectively inhibit bubble generation in the crystal, and service life of the crucible is long without vacuum-pumping, and not only c-plane alumina single crystal, but also r-plane, m-plane or n-plane white alumina single crystal can be pulled.

Description

technical field [0001] The invention relates to a structure improvement and method of a crystal growth furnace for drawing white gemstone single crystals, more precisely, it relates to a technique for drawing white gemstone single crystals with molten alumina, and belongs to the field of artificial crystal growth. Background technique [0002] White sapphire polished wafers processed from white sapphire single crystals are the substrate materials for epitaxial GaN. Epitaxial GaN is the base material used in the manufacture of LEDs, which are used for lighting and as backlights for LED TVs. The advantage of LED is that it has high luminous efficiency and can save a lot of energy. [0003] The processing method of white sapphire slices is generally cut into pieces with white sapphire crystal ingots, and then processed through grinding, polishing and other processes. There are various methods for manufacturing white gem crystal ingots. The ones with better crystallization and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/20C30B15/00
Inventor 肖型奎陈猛刘浦锋宋洪伟陈杰李显元唐旭
Owner SHANGHAI ADVANCED SILICON TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products