Improvement on structure of crystal growing furnace for pulling alumina single crystal and method for growing alumina single crystal

A structure improvement and crystal growth furnace technology, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of reducing the service life of the crucible, complex device structure, and deterioration of the crucible, so as to suppress the generation of bubbles, Excellent effect with little deterioration

Active Publication Date: 2013-08-21
SHANGHAI ADVANCED SILICON TECH CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

This patent has several obvious shortcoming: 1 uses vacuum pumping device, makes device structure complicated
2 The use of a higher concentration of oxygen will lead to the deteriora

Method used

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  • Improvement on structure of crystal growing furnace for pulling alumina single crystal and method for growing alumina single crystal
  • Improvement on structure of crystal growing furnace for pulling alumina single crystal and method for growing alumina single crystal
  • Improvement on structure of crystal growing furnace for pulling alumina single crystal and method for growing alumina single crystal

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Embodiment 7 and 8

[0051] The oxygen concentration in the crystal growth process affects the bubbles in the crystal. When the concentration is too low, such as lower than 0.1%, more bubbles will be generated.

[0052] The rotation speed will also affect the quality of the crystal ingot. When the rotation speed and the pulling speed are too high, the crystal quality will be deteriorated. The best rotation speed for drawing c-plane white gemstones in the present invention is 0.5-3rpm, and the pulling speed is 0.5-2mm / hour.

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Abstract

The invention relates to an improvement on structure of crystal growing furnace for pulling alumina single crystal and method for growing alumina single crystal, and the structure improvement is that a cylinder cavity body is in a thermal insulator, the cylinder type cavity is placed with a crucible, and the external part of the thermal insulator is provided with a heating wire. The structure improvement is characterized in that the upper side part of the thermal insulator has at least one opening, and the middle part of the upper part of the thermal insulator is provided with an opening, and oxygen and inactive gas flow into the cavity from the opening, and the gas flows out from the opening, and the opening is the port for the seed crystal to arrive at the solution. The mixing gas composed of oxygen and inactive gas is used in the growing process, and the concentrations of oxygen in the mixing gas at different steps are different; and a purifying process is added. The invention can effectively inhibit bubble generation in the crystal, and service life of the crucible is long without vacuum-pumping, and not only c-plane alumina single crystal, but also r-plane, m-plane or n-plane white alumina single crystal can be pulled.

Description

technical field [0001] The invention relates to a structure improvement and method of a crystal growth furnace for drawing white gemstone single crystals, more precisely, it relates to a technique for drawing white gemstone single crystals with molten alumina, and belongs to the field of artificial crystal growth. Background technique [0002] White sapphire polished wafers processed from white sapphire single crystals are the substrate materials for epitaxial GaN. Epitaxial GaN is the base material used in the manufacture of LEDs, which are used for lighting and as backlights for LED TVs. The advantage of LED is that it has high luminous efficiency and can save a lot of energy. [0003] The processing method of white sapphire slices is generally cut into pieces with white sapphire crystal ingots, and then processed through grinding, polishing and other processes. There are various methods for manufacturing white gem crystal ingots. The ones with better crystallization and...

Claims

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Application Information

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IPC IPC(8): C30B29/20C30B15/00
Inventor 肖型奎陈猛刘浦锋宋洪伟陈杰李显元唐旭
Owner SHANGHAI ADVANCED SILICON TECH CO LTD
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