A plasma etching chamber and method for controlling wafer temperature

Abstract

The invention provides a plasma etching chamber for controlling the temperature of a wafer and a method thereof. The plasma etching chamber for controlling the temperature of the wafer comprises an upper electrode, a lower electrode and a static sucker, wherein the upper electrode is connected with a ground lead, the lower electrode is connected with a radio frequency source, the static sucker is located between the upper electrode and the lower electrode, a quartz window is arranged below the upper electrode, a heating device is arranged between the quartz window and the upper electrode, a coolant circulation device is arranged inside the static sucker, and a reflection device is arranged between the heating device and the upper electrode or a reflection coating is coated on the inner surface, opposite to the upper electrode, of the heating device or the inner surface of the side face. Through the reflection coating or the reflection device, light rays of the heating device can be gathered on the wafer and are evenly distributed on the surface of the wafer, and a utilization rate of heat energy of the heating device is improved. Through the coolant circulation device at the lower portion of the static sucker, the temperature of the surface of the wafer is further controlled accurately, good control on the temperature of the wafer is achieved, and at the same time, the plasma etching chamber is simple in structure and easy to maintain.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a plasma etching chamber for controlling the temperature of a wafer and a method thereof. Background technique [0002] In the plasma etching process, a higher plasma source is often used to achieve a higher etching rate for the etching of the wafer and its surface. However, this will increase the thermal load of the wafer. In addition, as the stacking structure in the wafer becomes more and more complex, the reaction chamber needs to undertake more process content. Since the complex stacking structure contains a large number of conversions, the etching process procedure is more complicated, resulting in the gap between different reaction chambers. Matching is more difficult. In order to achieve precise matching between reaction chambers and these process programs, and to ensure that every wafer coming out of each reaction chamber has the same performance, acc...

AI Technical Summary

Problems solved by technology

The electrostatic chuck can be of different types such as single area, inner and outer ring double area, multi-area, etc., so as to control the temperature of different positions of the wafer, but due to the temperature control mechanism of contact heat conduction, the temperature control of the wafer is contact and non-direct. , causing the problem of too long reaction time and poor uniformity

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