Manufacturing method of back of IGBT (Insulated Gate Bipolar Transistor) chip
A manufacturing method and chip technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of poor uniformity of device conduction voltage and insufficient activation rate, etc., and achieve simple processing steps, flexible collocation, and optimized device formation Effect
Active Publication Date: 2015-02-18
南瑞联研半导体有限责任公司
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Insufficient injection activation rate on the back side, poor uniformity of on-state voltage of the device, and when manufacturing high-performance IGBTs, limited by the metal on the front side, the activation / alloy temperature on the back side must be lower than 450C, and an ideal junction morphology cannot be formed on the back side
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0041] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0042] figure 1 It is an implementation scheme for the manufacturing and processing process of the backside of the IGBT chip. This scheme performs backside processing after the front side of the IGBT chip is manufactured. The detailed implementation method is as follows:
[0043] (1) Thinning of the back side: According to the type of IGBT device (PT, NPT, FS, SPT, etc.), the final thickness of the wafer is set for thinning. Thinning needs to focus on the roughness of the silicon surface and remove the damaged layer on the back side.
[0044] (2) One-time injection on the back side / secondary injection on the back side: The elements and injection conditions of the back side injection are determined by the back junction morphology and device type. The back of the IGBT chip generally has two junction features, one is the ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a manufacturing method of the back of an IGBT (Insulated Gate Bipolar Transistor) chip. The manufacturing method comprises the following steps that A. the back of the IGBT chip is reduced; B. an element is injected into the back of the IGBT chip; C. the back of the IGBT chip is annealed; D. metal is adopted to the back of the IGBT chip; and E. the alloy process is performed on the back of the IGBT chip. The manufacturing method is used after the front surface of the IGBT chip is completed or in the process that the front surface of the IGBT chip is manufactured. By using the processes of reduction, injection, activation, diffusion, back metal, alloy and the like, structural features (including a back emitting electrode, a back buffer layer and the like) of the back of the IGBT chip are completed, and additionally, electrode extraction of a back collector is completed. The manufacturing method has the advantage of concise processing steps, and the optimization of the manufacturing method of the back of the IGBT chip is favorable for improving the performance of the chip and the reliability after the IGBT chip is packaged.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a method for manufacturing the back side of an IGBT chip. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) has the advantages of both unipolar devices and bipolar devices, simple driving circuit, low power consumption and cost of control circuit, low on-state voltage, and low loss of the device itself. It is the future choice for high voltage and high current. Direction of development. [0003] The existing backside manufacturing technology of IGBT chips is mostly based on the improvement of high-voltage VDMOS backside technology after the front side of the IGBT chip is manufactured. Insufficient injection activation rate on the back side, poor uniformity of on-voltage of the device, and when manufacturing high-performance IGBTs, limited by the metal on the front side, the activation / alloy temperature on the back side must be lower than 450C, ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/331
Inventor 刘江赵哿高明超金锐
Owner 南瑞联研半导体有限责任公司