Method of forming radio frequency devices

Abstract

A method for forming a radio frequency device, comprising: providing a semiconductor-on-insulator layer comprising a back substrate, a buried oxide layer covering the back substrate, and a top semiconductor layer covering the buried oxide layer, the A transistor and an interlayer dielectric layer covering the transistor are formed on the surface of the top semiconductor layer; a temporary support layer with a flat surface is provided, and the surface of the interlayer dielectric layer is bonded to the temporary support layer; the back substrate is removed until the exposed a buried oxide layer; providing a high-resistivity substrate, bonding the high-resistivity substrate to the buried oxide layer; bonding the high-resistivity substrate to the buried oxide layer After bonding, the temporary support layer is removed to expose the surface of the interlayer dielectric layer. The formed radio frequency device has less signal loss and high linearity.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a radio frequency device. Background technique [0002] Semiconductor devices continue to develop toward high integration, high operating speed, and low power consumption. Therefore, the application of bulk silicon (bulksilicon) substrates is increasingly restricted. On the contrary, the silicon-on-insulator substrate has the advantages of realizing dielectric isolation of components in integrated circuits, completely eliminating the parasitic latch effect in bulk silicon CMOS circuits, small parasitic capacitance, high integration density, fast speed, simple process, and small short channel effect. And it is suitable for low-power and low-voltage circuits. Therefore, the use of silicon-on-insulator substrates to form semiconductor devices is becoming more and more popular. [0003] RF devices are required to have a small parasitic capaci...

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Problems solved by technology

[0005] However, in the actual use process of the above-mentioned silicon-on-insulator radio frequency devices, it will be found that in some radio frequency applications that require high linearity and low insertion loss, there are defects of large signal loss and poor linearity of radio frequency signals.

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