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Tm-doped LaVO4 luminescent material and melting crystal growth method thereof

A technology for crystal growth and luminescent materials, which is applied in the directions of crystal growth, luminescent materials, polycrystalline material growth, etc., can solve problems such as low efficiency, and achieve the effects of controllable operation, simple process, and high quality

Inactive Publication Date: 2013-09-18
HEFEI JINGQIAO PHOTOELECTRIC MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But inefficiency is the main problem with this class of laser crystals

Method used

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  • Tm-doped LaVO4 luminescent material and melting crystal growth method thereof
  • Tm-doped LaVO4 luminescent material and melting crystal growth method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Prepare Tm with Tm doping concentration of 0.5at%. z La 1-z VO 4 Single crystal:

[0017] (1) Using Tm 2 o 3 , La 2 o 3 , V 2 o 5 As a raw material, carry out batching according to the following compound formula:

[0018]

[0019]

[0020] The composition of each component of this raw material is as follows:

[0021] T m 2 o 3 0.3574 %

[0022] La 2 o 3 65.9504 %

[0023] V 2 o 5 33.6922%

[0024] And these raw materials are fully mixed evenly to obtain the ingredient mixture.

[0025] (2) Press the uniformly mixed raw material mixture into a cake shape, and sinter at 800-1100°C for 10-48 hours to obtain the initial raw material for crystal growth; or the raw material after pressing and forming without additional sintering Directly used as raw material for growing crystals;

[0026] (3) Put the initial raw material for crystal growth into the growth crucible, and obtain the initial melt for crystal growth by heating a...

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Abstract

The invention discloses a Tm-doped lanthanum vanadate-doped TmzLa1-zVO4 luminescent material (z is more than or equal to 0.0001 and less than or equal to 0.1) and a melting crystal growth method thereof. The melting crystal growth method comprises the following steps of: carrying out sufficient mixing, press forming and high-temperature sintering on raw materials prepared in proportion to obtain an initial raw material of crystal growth; placing the initial growth raw material into a crucible, and sufficiently melting through heating to obtain an initial molten mass of melting growth; and then growing by adopting melting methods, such as a czochralski method, a bridgman-stockbarger method, a temperature-gradient method and other melting methods. The TmzLa1-zVO4 can be used as a luminescent display material, a laser operating substance of 2 micrometers, and the like.

Description

technical field [0001] The invention relates to the field of luminescent materials and crystal growth, Tm-doped lanthanum vanadate TmzLa 1-z VO 4 , and their melt crystal growth method. Background technique [0002] T m 3+ Ion-doped mid-infrared solid-state lasers have been widely used because of their absorption band around 0.799 μm, which makes the Tm 3+ It is suitable for AlGaAs laser diode pumping, and the obtained laser has the advantages of long life and compact structure. Use Tm 3+ in the crystal 3 f 4 → 3 h 5 and 3 h 4 → 3 h 6 Transition can obtain 2.3μm and 1.9μm lasers respectively, and has broad application prospects in medical, national defense, information, scientific research and other fields. But inefficiency is the main problem with this class of laser crystals. Therefore, exploring new Tm-doped laser crystals with excellent performance is an important topic at present. LaVo 4 With stable chemical characteristics and excellent physical propert...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/30C09K11/82
Inventor 林鸿良陈俊
Owner HEFEI JINGQIAO PHOTOELECTRIC MATERIAL
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