Ho-doped LaVO4 luminescent material and melting crystal growth method thereof

A technology for crystal growth and luminescent materials, which is applied in the directions of crystal growth, luminescent materials, polycrystalline material growth, etc., can solve problems such as low efficiency, and achieve the effects of saving production costs, simple reactions, and low equipment requirements

Inactive Publication Date: 2013-09-18
HEFEI JINGQIAO PHOTOELECTRIC MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But inefficiency is the main problem with this class of laser crystals

Method used

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  • Ho-doped LaVO4 luminescent material and melting crystal growth method thereof
  • Ho-doped LaVO4 luminescent material and melting crystal growth method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Preparation of HozLa1-zVO4 single crystals with Ho doping concentrations of 0.5at% respectively:

[0019] (1) Using Ho 2 o 3 , La 2 o 3 , V 2 o 5 As a raw material, carry out batching according to the following compound formula:

[0020]

[0021]

[0022] The composition of each component of this raw material is as follows:

[0023] Ho 2 o 3 0.35%

[0024] La 2 o 3 65.9553 %

[0025] V 2 o 5 33.6947%

[0026] And these raw materials are fully mixed evenly to obtain the ingredient mixture.

[0027] (2) Press the homogeneously mixed raw material mixture into a cake shape, and sinter at 970°C for 46 hours to obtain the initial raw material for crystal growth; or the raw material after pressing is directly used for growth without additional sintering crystal raw material;

[0028] (3) Put the initial raw material for crystal growth into the growth crucible, heat and fully melt to obtain the initial melt for crystal growth; th...

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PUM

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Abstract

The invention discloses a Ho-doped lanthanum vanadate HozLa1-zVO4 luminescent material (z is more than or equal to 0.0001 and less than or equal to 0.1) and a melting crystal growth method thereof. The melting crystal growth method comprises the following steps of: carrying out sufficient mixing, press forming and high-temperature sintering on raw materials prepared in proportion to obtain an initial raw material of crystal growth; placing the initial growth raw material into a crucible, and sufficiently melting through heating to obtain an initial molten mass of melting growth; and then growing by adopting melting methods, such as a czochralski method, a bridgman-stockbarger method, a temperature-gradient method and other melting methods. The HozLa1-zVO4 can be used as a luminescent display material, a laser operating substance of 2 micrometers, and the like.

Description

technical field [0001] The invention relates to the field of luminescent materials and crystal growth, Ho-doped lanthanum vanadate HozLa 1-z VO 4 , and their melt crystal growth method. Background technique [0002] Ho-doped luminescent materials are important 2 μm band laser crystals, which have broad application prospects in medical, national defense, information, scientific research and other fields. But inefficiency is the main problem with this class of laser crystals. Therefore, exploring new Ho-doped laser crystals with excellent performance is an important topic at present. LaVo 4 Has stable chemical properties and excellent physical properties, Ho z La 1-z VO 4 have good luminescence properties, thus, Ho z La 1-z VO 4 It is expected to become a new type of 2μm band laser crystal with excellent performance Contents of the invention [0003] The object of the invention is to provide rare earth vanadate Ho z La 1-z VO 4 The luminescent material and its...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/30C09K11/82
Inventor 林鸿良陈俊
Owner HEFEI JINGQIAO PHOTOELECTRIC MATERIAL
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