Semiconductor material micro-area stress test system

A stress testing and semiconductor technology, applied in the direction of measuring the change force of optical properties of materials when they are stressed, can solve the problems of long test time and low measurement accuracy, and achieve little dependence on experience and test results. Accurate, fast and efficient test process

Inactive Publication Date: 2013-09-18
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

The micro-Raman spectrometer can test the size and distribution of stress at room temperature, but the measurement accuracy is not high, and the test time is very long, often taking several hours or even longer

Method used

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  • Semiconductor material micro-area stress test system
  • Semiconductor material micro-area stress test system

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Embodiment Construction

[0021] The invention proposes a brand-new micro-area stress testing system, which can perform stress testing on micron-scale areas of materials.

[0022] The principle of the micro-area testing system of the present invention is: for semiconductor materials, if there is residual stress inside, it will show anisotropy, that is, the optical axis will change. When the incident polarized laser light is reflected by the sample, the reflection coefficients of the two optical axes that exhibit anisotropy are different for the light. Residual Stress.

[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0024] figure 1 A schematic structural diagram of the basic principle of the micro-area stress testing system of the present invention is shown. Such as figure 1 As shown, the ...

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Abstract

The invention discloses a semiconductor material micro-area stress test system. The system comprises a laser source, a spatial filter, a polarizer, an analyzer, an objective, a carrier, a photoelastic modulator, a detector and a lock-in amplifier, and a computer is adopted to control point-by-point scanning and acquire and process data. By measuring the difference Delta R/R between intensity reflection ratios on two perpendicular directions on the surface of a material, the stress distribution of the tested material is obtained. The system can overcome the adverse affection brought by other test systems, does not injure the material, and characterizes the stress distribution of the material within a small area, the test process is simple and rapid, and the test precision is high.

Description

technical field [0001] The invention belongs to the technical field of measuring equipment, and in particular relates to a micro-area stress testing system applied in the manufacturing process of semiconductor materials. Background technique [0002] In the field of semiconductor material growth and process manufacturing, the pursuit of perfection in material structure has always been the direction of people's efforts. The size of the residual stress in the material directly reflects the quality of the material and the pros and cons of the preparation process. With the improvement of the growth process and the improvement of the requirements for the material structure, people put forward requirements for the size and distribution of the material stress in the micro-region. Having a complete, convenient and rapid micro-area stress testing system can provide reliable reference data for the modern material growth process, in order to obtain better material quality. [0003] P...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/24
Inventor 高寒松陈涌海张宏毅刘雨
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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