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CMOS transistor and polysilicon gate manufacturing method

A technology of polysilicon gate and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of small driving current of CMOS transistors, and achieve the effect of increasing the driving current

Inactive Publication Date: 2013-09-18
PEKING UNIV FOUNDER GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0010] An embodiment of the present invention provides a method for manufacturing a CMOS transistor and its polysilicon gate, which is used to solve the problem in the prior art that the driving current of the CMOS transistor manufactured by the existing polysilicon gate manufacturing process is relatively small

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  • CMOS transistor and polysilicon gate manufacturing method

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Embodiment Construction

[0031] The present invention adopts low-pressure chemical vapor deposition to form polysilicon on the substrate at a deposition temperature of 615°C to 635°C; and performs diffusion doping treatment on the polysilicon at a diffusion temperature of 870°C to 930°C to form The impurity-containing polysilicon solves the problem in the prior art that the driving current of the CMOS transistor produced by the existing polysilicon gate process is small.

[0032] The embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings of the specification.

[0033] Such as figure 1 As shown, a method for manufacturing a polysilicon gate according to an embodiment of the present invention includes the following steps:

[0034] S101, using low-pressure chemical vapor deposition to form polysilicon on a substrate at a deposition temperature of 615°C to 635°C;

[0035] S102: Perform diffusion doping treatment on the polysilicon formed in S1...

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Abstract

The invention relates to the field of semiconductor device manufacturing, and particularly relates to a CMOS transistor and a polysilicon gate manufacturing method to solve the problem of small drive current of the CMOS transistor which is manufactured by adopting the current polysilicon gate manufacturing process in the prior art. The polysilicon gate manufacturing method provided by the embodiment of the invention comprises the steps that polysilicon is formed on a substrate by using low pressure chemical vapor deposition at the deposition temperature of 615 DEG C to 635 DEG C; and diffusion doping is carried out on the polysilicon at the diffusion temperature of 870 DEG C to 930 DEG C, so as to form polysilicon containing impurities. The polysilicon gate which is manufactured by adopting the manufacturing method provided by the embodiment of the invention improves the drive current of the CMOS transistor.

Description

Technical field [0001] The present invention relates to the manufacturing field of semiconductor devices, in particular to a manufacturing method of a CMOS transistor and its polysilicon gate. Background technique [0002] Because CMOS (Complementary Metal Oxide Semiconductor) transistors have the characteristics of low power consumption and high integration, they are widely used in integrated circuits (ICs) as the basic units of CMOS digital integrated circuits. [0003] Polycrystalline silicon (polycrystalline silicon) is a form of elemental silicon. Because polycrystalline silicon has a high melting point, a small amount of impurities can affect its conductivity, and its resistance is low after doping. It is often used as a semiconductor device such as a field effect transistor. (FET, Field Effect Transistor), the gate electrode in a CMOS transistor. [0004] The manufacturing method of the silicon gate in the existing CMOS transistor includes the following steps: [0005] Step a....

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/283H01L29/49
Inventor 徐顺强张枫陈建国
Owner PEKING UNIV FOUNDER GRP CO LTD
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