A packaging structure and packaging method for a high-power linear array laser
A line array laser and packaging structure technology, applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve problems such as inability to ensure strict collinearity, low reliability of series circuits, and unguaranteed level of light output, etc., to increase work Stability, improved heat dissipation, and high reliability
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Embodiment 1
[0032] Such as Figure 1-3 As shown, a packaging structure of a high-power line array laser includes a plurality of semiconductor bar line array lasers 2 arranged at equal intervals in a straight line, and two adjacent semiconductor bar bar line array lasers 2 are arranged in reverse, for example : The p-side electrode of a semiconductor bar line array laser faces up, and the n-side electrode faces down; the p-side electrode of the adjacent semiconductor bar line array laser faces down, and the n-side electrode faces up, that is, the electrode direction is opposite;
[0033] The p-face electrode of the semiconductor bar line array laser a is connected in series with the n-face electrode of the semiconductor bar line array laser b adjacent to one side through the heat sink 1, and the n-face electrode of the semiconductor bar line array laser a The p-plane electrodes of the semiconductor bar line array laser c adjacent to the other side are connected in series through the heat s...
Embodiment 2
[0039] A packaging method for packaging structure as described in embodiment 1, comprising steps as follows:
[0040] (1) According to the prior art, a plurality of semiconductor bar line array lasers 2 are welded and arranged in the insulating region 5 of the insulating ceramic substrate 10 according to straight lines; one side of the insulating ceramic substrate 10 is provided with a patterned metal layer 4, The pattern shape of the pattern metal layer is adapted to the arrangement shape of the heat sink 1; the two adjacent semiconductor bar line array lasers 2 are set in reverse; the area outside the pattern metal layer 4 is an insulating area 5 .
[0041] (2) The p-face electrode of the semiconductor bar line array laser a is connected in series with the n-face electrode of the semiconductor bar line array laser b adjacent to one side through the heat sink 1, and the semiconductor bar bar line array laser a is connected in series. The n-face electrode is connected in seri...
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