Fin field effect transistor and technology thereof

Abstract

The invention discloses a fin field effect transistor and the technology of the fin field effect transistor. The technology of the fin field effect transistor comprises the following steps that a substrate is provided; a first fin field effect transistor and a second field effect transistor are formed on the substrate, wherein the first fin field effect transistor comprises a first metal layer, and the second fin field effect transistor comprises a second metal layer; the processing technology is conducted on the first metal layer to change the threshold voltage of the first fin field effect transistor.

Description

technical field [0001] The present invention relates to a fin field effect transistor (FinFET) and its process, and in particular to a fin field effect transistor (FinFET) and its process, which changes the physical properties of the metal layer in the field effect transistor by performing a treatment process properties or chemical properties. Background technique [0002] In the known semiconductor industry, polysilicon is widely used in semiconductor devices such as metal-oxide-semiconductor (MOS) transistors as a standard gate filling material of choice. However, as the size of MOS transistors continues to shrink, traditional polysilicon gates have lower device performance due to boron penetration (boron penetration) effect, and the unavoidable depletion effect (depletion effect) and other problems, so that the equivalent gate The thickness of the dielectric layer increases and the capacitance value of the gate decreases, which leads to the decline of the driving ability...

AI Technical Summary

Problems solved by technology

However, as the size of MOS transistors continues to shrink, traditional polysilicon gates have lower device performance due to boron penetration (boron penetration) effect, and the unavoidable depletion effect (depletion effect) and other problems, so that the equivalent gate The thickness of the dielectric layer increases and the gate capacitance value decreases, which leads to the decline of the driving ability of the device and other difficulties

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