The invention relates to a preparation method of a nanometer scale W/TiN composite refractory metal gate, the steps are as follows: a device source/ leakage area cobalt silicide is formed, after that, the flattening process is carried out, a gate groove is corroded, a gate silicon oxide is bleached and replaced, then the gate is oxidized again; the vacuum thermal annealing processing is carried out; a refractory metal TiN is sputtered, the thickness is 25 to 45nm; a W thin film is sputtered, the thickness is 90 to 110nm; the acetone and the anhydrous ethanol are used for ultrasonic cleaning, the deionized water is used for flushing, and the drying is carried out in hot N2; the W/TiN T-shaped gate is done with the lithography; the W/TiN T-shaped gate is etched by reaction ions, the etching gas is C12 and SF6; a chemical vapor deposition SiO2 is strengthened by a plasma, the thickness of SiO2 is 500 to 700nm; a contact hole is formed; and the metallizing annealing is carried out. The invention solves a series of serious problems of excessive high gate resistance, serious boron penetration of a PMOS device, polysilicon gate depletion, incompatibility with a high k gate dielectric and so on which exist in the conventional polysilicon gate, so the invention can obtain excellent device properties.