Semiconductor device and manufacturing method thereof

Abstract

A method of manufacturing a semiconductor device includes forming a gate oxide layer on a substrate and forming a nitride layer on the surface of the oxide layer using nitrogen at a concentration of 9 to 11% as a plasma gas. With such scheme, the plasma nitridation method is used so that charge mobility can be preserved for an NMOS transistor and the boron penetration is prevented for a PMOS transistor in a semiconductor having a gate length of 100 nm or less.

Description

[0001] Related technologies and their cross-references [0002] This application claims priority and benefit from Korean Patent Application No. 10-2004-0074497 filed in the Korean Intellectual Property Office on September 17, 2004, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a semiconductor device and a method of manufacturing the same. Background technique [0004] Typically, in MOSFETs, the gate insulating layer includes a silicon oxide layer. As semiconductor devices become more highly integrated and their operating speeds increase, the gate insulating layer therein becomes thinner and thinner. Therefore, because the gate insulating layer is thin, boron permeation may sometimes occur between the gate electrode and the silicon substrate. Therefore, for a semiconductor device having a very thin line structure (for example, less than 0.18 μm), boron penetration from the gate electrode to the s...

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Problems solved by technology

However, for semiconductor devices on the order of less than 90 nm lines, nitride layers cannot be formed by such thermal nitridation because such thermal nitride layers cannot provide the desired transistor performance

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