Structure of for preparing gate containing nitrogen in silicon oxide layer of semiconductor device and preparation technique

Abstract

Technique of preparing gate silicon oxide layer is key technique of fabricating IC. A small quantity of nitrogen element doped into traditional gate silicon oxide improves its characteristics. Rapid tempering oven (RTO) is adopted in the invention to control diffusibility of element accurately. Thickness of silicon oxide layer and distribution of nitrogen element are controlled through methods of multistep oxidation and annealing (diffusing). The preparing method solves issues of boron penetration, raises reliability, reduces leakage current, and does not effect on carrier mobility in channel obviously.

Description

technical field

[0001] The invention belongs to the technical field of integrated circuit manufacturing technology, and in particular relates to a nitrogen-containing gate silicon oxide layer structure of a semiconductor device and a manufacturing technology thereof. Background technique

[0002] The preparation process of the gate silicon oxide layer is a key process technology in the integrated circuit manufacturing process, which directly affects and determines the electrical characteristics and reliability of the device, especially in the deep submicron integrated circuit manufacturing process, because the gate silicon oxide layer becomes Thinner and thinner, approaching or even working at its physical limit value, it will face many challenges, mainly in the following two aspects: (1) the electrical breakdown reliability and leakage current of thin gate silicon oxide, and the direct tunneling current problem; (2) The problem of boron penetration (Bpenetration) from P+ po...

Images