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Film system structure capable of achieving almost-complete absorption at infrared band and based on heavily-doped semiconductor

A technology of complete absorption and infrared band, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult and large-area etching, hinder near-complete absorption of infrared band, etc., achieve high coordination, mature nano-processing technology, Angle insensitive effect

Inactive Publication Date: 2013-09-25
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Claims
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Problems solved by technology

To achieve near-complete absorption in the infrared band, the periodic structure on the surface of the material must be in the range of hundreds of nanometers, and the internal structure of the period has specific requirements. It is difficult to etch a small period of metal surface with high precision. Large-area etching has become a major obstacle to the development of near-complete absorption technology in the infrared band

Method used

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  • Film system structure capable of achieving almost-complete absorption at infrared band and based on heavily-doped semiconductor
  • Film system structure capable of achieving almost-complete absorption at infrared band and based on heavily-doped semiconductor
  • Film system structure capable of achieving almost-complete absorption at infrared band and based on heavily-doped semiconductor

Examples

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Effect test

Embodiment 1

[0016] At a temperature of 25°C, 200 cycles of heavily doped AlZnO and TiO multilayer films were alternately grown by the sol-gel method, in which the thickness of the prepared heavily doped AlZnO monolayer film was about 20nm. reach 10 19 , the thickness of titanium oxide monolayer film is about 200nm. Finally, a multi-layer periodic film structure with near-complete absorption characteristics in the infrared band is obtained.

Embodiment 2

[0018] In a vacuum environment at a temperature of 275 °C, 10 cycles of heavily doped zinc oxide and aluminum oxide multilayer films were alternately prepared by magnetron sputtering. The thickness of the heavily doped aluminum zinc oxide monolayer film was about 200 nm. Fluor concentration up to 10 21 , the thickness of aluminum oxide film is about 5nm. Finally, a multi-layer periodic film structure with near-complete absorption characteristics in the infrared band is obtained.

Embodiment 3

[0020] At a temperature of 190°C, use vapor deposition (such as atomic layer deposition) to alternately grow heavily doped aluminum zinc oxide and zinc oxide 10-period multilayer films, in which the thickness of the heavily doped aluminum zinc oxide monolayer film is about 100nm. The carrier concentration reaches 10 20 , the thickness of ZnO monolayer film is about 60nm. Finally, a multi-layer periodic film structure with near-complete absorption characteristics in the infrared band is obtained.

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Abstract

The invention discloses a film system structure capable of achieving almost-complete absorption at an infrared band and based on a heavily-doped semiconductor. According to the film system structure, 10-200 groups of cyclical film systems are deposited on a substrate, each cyclical film system is composed of a heavily-doped semiconductor film layer and a sull layer, the multi-layer film system structure has the almost-complete feature that the absorptivity reaches 99% at the specific infrared band. The film system structure capable of achieving almost-complete absorption at the infrared band and based on the heavily-doped semiconductor has the advantages of being simple in technology, low in cost, insensitive to deviation and the angle, good in controllability, good in harmony, capable of growing in a large area, mature in nano-fabrication technology, and capable of having a broad application prospect in the fields of detectors, space discrimination and the like.

Description

technical field [0001] The invention relates to semiconductor material technology, and specifically refers to a film system structure based on a heavily doped semiconductor near complete absorption in the infrared band. Background technique [0002] With the rapid development of information technology, electromagnetic materials have more and more extensive and profound influence on the current information, national defense, economy, medicine and other fields. In recent years, near-complete absorption in new artificial electromagnetic materials has received more and more attention, and has been applied in thermal radiators, detectors, sensors, spatial resolution and other fields. The invention proposes a preparation method of a multi-layer periodic film system that can be used in the fields of detectors, space resolution, etc., aiming at the near complete absorption technology in the infrared band. [0003] For a long time, constructing a metal-insulator-metal multilayer fil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352
Inventor 张云陈鑫孙艳魏调兴董文静黄婵燕张克难戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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