Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device

A semiconductor and device technology, applied in the field of n-type semiconductor semiconductor devices and semiconductor devices, can solve problems such as leakage current, affecting the stability and reliability of semiconductor devices, and affecting luminous efficiency, so as to improve efficiency and reliability, and luminous Optimum effect on area and light output

Inactive Publication Date: 2013-09-25
TAIZHOU BEYOND TECH +1
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, straight cutting or half cutting can be used to cut optoelectronic semiconductors. Regardless of straight cutting or half cutting, it will cause uneven damage to the cross-section of each layer, and the cross-section of each layer will be exposed during the cutting process. Impurities and crushing will stick to the cross-sections of each epitaxial layer, causing conduction between the layers, and adsorbing various charged particles on the cross-sections of each layer, mobile ions in the oxide layer on the semiconductor surface, fixed charges and traps Charges, etc. can cause electric fields and generate leakage currents, which affect the performance of the chip
[0004] The above-mentioned problems affect the stability and reliability of semiconductor devices, and affect the luminous efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The semiconductor device of the present invention includes a substrate having an n-type semiconductor provided with an n-type electrode and a semiconductor chip including a p-type semiconductor provided with a p-type electrode on the substrate, and one of the epitaxial crystal layers exposed on the side of the semiconductor chip The junction between the two is covered with an insulating layer. The insulating layer prevents conduction and leakage between the epitaxial crystal layers. Taking optoelectronic semiconductor as an example, the details of optoelectronic semiconductor device are as follows:

[0026] Such as figure 1 with figure 2 The optoelectronic semiconductor device shown includes a substrate 1, a buffer layer 2 on the substrate 1, and an n-type contact layer 7 on the other side of the substrate 1, and an n-type cladding layer 3 on the buffer layer 2. The light-emitting layer 4, the p-type cladding layer 5 and the p-type contact layer 6, the p-type contact lay...

Embodiment 2

[0035] The second embodiment is basically the same as the first embodiment. The difference is that when the production of the semiconductor device is started after the fabrication of the optoelectronic semiconductor epitaxial crystal sheet, the epitaxial crystal sheet is first physically cut, and then the epitaxial crystal sheet is etched to make each layer section of the epitaxial crystal sheet Level, and then cover the junction between the epitaxial crystal layers exposed on the side of the semiconductor chip with an insulating layer 8 made of plastic or resin; then make a p-type electrode on the p-type contact layer of the epitaxial layer, and then apply it to the electronic semiconductor An n-type electrode is made on the n-type contact layer on the back of the epitaxial crystal sheet, and then the optoelectronic semiconductor epitaxial crystal sheet is cut or broken to form a semiconductor chip. Physical cutting of the epitaxial crystal sheet will cause dislocation and unev...

Embodiment 3

[0037] Such as Figure 5 As shown, the semiconductor device includes a substrate, a semiconductor chip of an n-type semiconductor with an n-type electrode and a p-type semiconductor with a p-type electrode on the substrate, and one of two or more adjacent light-emitting areas in the semiconductor chip A non-conductive insulating separation layer 9 is formed therebetween. The insulating separation layer 9 is formed by an ion implantation method or a doping method or by etching a trench and filling an insulating material. details as follows:

[0038] Use photolithography to attach a protective film to prevent ion implantation on the surface of the wafers in two or more adjacent light-emitting areas, and then open the window of the chip pattern on the protective film, and then use B ions or O 2 Ions are injected between adjacent light-emitting areas under an acceleration voltage of 100KV to form an insulating separation layer 9, that is, an insulating layer. Other content can be c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Roughnessaaaaaaaaaa
Login to View More

Abstract

The invention provides a semiconductor device, and belongs to the technical field of semiconductors. The semiconductor device solves the problem that the phenomena of electric conduction and electric leakage exist among epitaxial layers of an existing semiconductor chip. The semiconductor device comprises a substrate, wherein an n-type semiconductor with an n-type electrode and a p-type semiconductor chip containing a p-type semiconductor with p-type electrodes are arranged on the substrate. The semiconductor device is characterized in that the an insulating layer is formed in a juncture of the epitaxial layers of the semiconductor chip or of the lateral faces between the two or more than two adjacent light-emitting fields of the semiconductor chip. The phenomena of electric conduction and electric leakage among the epitaxial layers are avoided through the insulating layer, and further the efficiency and reliability of the semiconductor device are improved.

Description

Technical field [0001] The present invention belongs to the field of semiconductor technology, and relates to semiconductor devices, especially semiconductor devices with p-type semiconductors with p-type electrodes and n-type semiconductors with n-type electrodes on the substrate. Background technique [0002] The MOCVD epitaxial crystal growth method is used to grow an epitaxial layer on the substrate and make an optoelectronic semiconductor. After completion, the optoelectronic semiconductor needs to be cut into optoelectronic semiconductor chips. [0003] In the prior art, straight cutting or half cutting can be used to cut optoelectronic semiconductors. Regardless of straight cutting or half cutting, it will cause uneven damage to the cross section of each layer, and the cross section of each layer will be exposed during the cutting process. Impurities and crushing will adhere to the sections of each epitaxial layer, causing electrical conduction between the layers, and adsorb...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/44
Inventor 安部正幸
Owner TAIZHOU BEYOND TECH
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com