Unlock instant, AI-driven research and patent intelligence for your innovation.

SRAM power source on FPGA chip

A power supply and power supply voltage technology, applied in the field of microelectronics, can solve problems such as damage, no thermal analysis, and unrecoverable chips, so as to reduce power consumption, reduce dynamic switching power consumption and static DC power, and improve stability and reliability. Effect

Active Publication Date: 2013-09-25
北京鸿智电通科技有限公司
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Without an accurate thermal analysis, the increase in heat can easily exceed the maximum allowable junction temperature, causing irreversible damage to the chip

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SRAM power source on FPGA chip
  • SRAM power source on FPGA chip
  • SRAM power source on FPGA chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0024] Such as figure 1As shown, the FPGA on-chip SRAM power supply disclosed by the present invention includes a reference voltage circuit for providing dual reference voltages of 1.2V and 1.8V, a voltage detection circuit for detecting the SRAM power supply voltage value and the 1.2V reference voltage and generating a digital logic output A voltage comparator for suppressing or compensating the power supply voltage of the SRAM and improving the drive capability of the SRAM power supply voltage, a ring oscillator for generating an effective VCLK clock signal for the voltage pump output voltage, and a ring oscillator for the full-chip SRAM unit A charge pump supported by a 3.3V power supply; the reference voltage circuit is connected to the voltage detector, the v...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an SRAM power source on an FPGA chip. The SRAM power source on the FPGA chip comprises a reference voltage circuit which is used for providing 1.2V and 1.8V double-reference voltages, a voltage detector which is used for detecting the voltage value of the SRAM power source and the 1.2V reference voltages and generating digital logic output, a voltage comparator which is used for restraining or compensating the voltages of the SRAM power source and improving the driving capacity of the voltages of the SRAM power source, an annular oscillator which is used for generating effective VCLK clock signals of the output voltages of a voltage pump, and a charge pump which is used for providing 3.3V power support for a full-chip SRAM unit. The reference voltage circuit is connected with the voltage detector, the voltage detector is connected with the annular oscillator and the SRAM unit, the voltage comparator is connected with the charge pump, the annular oscillator is connected with the charge pump, and the charge pump provides work power for the SRAM unit. The SRAM power source on the FPGA chip can lower the dynamic switch power consumption and the static direct current power of an SRAM memory on the FPGA chip.

Description

technical field [0001] The invention relates to the field of microelectronics, in particular to an FPGA-on-chip SRAM power supply. Background technique [0002] The problem of power dissipation in integrated circuits is a thermal problem. So all problems related to heat may lead to changes in chip power consumption. But in the natural environment, heat problem is one of the most common phenomena. These problems also exist for semiconductor integrated circuits. Energy in nature is always being transformed. After the chip is powered on, a lot of electric energy has to be converted into heat energy. For relatively small chips, this converted energy will not cause fatal damage to the chip. But for large-scale chips, such as CPU, GPU, FPGA, the problem of excessive power consumption is inevitable, and the huge heat will cause serious and irreversible damage to the chip. Moreover, with the continuous advancement of semiconductor process technology and the continuous reduction...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H02M3/07
Inventor 何弢
Owner 北京鸿智电通科技有限公司