Single crystal furnace

Abstract

The invention discloses a single crystal furnace which comprises a furnace body, a heater arranged at the lower peripheral wall in the furnace body, and a crucible supporting rod penetrating through the bottom of the furnace body through an opening formed in the center of the bottom of the furnace body, wherein a crucible tray for supporting a crucible is fixed at the upper end of the crucible supporting rod, and the crucible supporting rod is capable of driving the crucible tray to move in a vertical direction. The single crystal furnace also comprises a heat insulation part sleeved on the crucible supporting rod, when the single crystal furnace is in a heating process section, the heat insulation part props against a pressing sheet at the bottom of the furnace body; when the single crystal furnace is in an isometric process section, the heat insulation part is positioned between the crucible supporting rod and the lower part of the heater. When the single crystal furnace is in the isometric process section, due to the adoption of the heat insulation part, heat generated by the lower part of the heater is effectively prevented from being absorbed by the crucible supporting rod, the drop of the temperature at the lower part of a heat field is reduced, the heat loss is reduced, the power of the heater running in the single crystal furnace is lowered, and the electric energy is saved.

Description

technical field [0001] The invention relates to the technical field of single crystal silicon production equipment, in particular to a single crystal furnace. Background technique [0002] Due to its non-polluting, inexhaustible, and non-regional restrictions, solar energy has become the main research direction for the development and utilization of new energy. The application of solar cells is also becoming more and more popular, among which monocrystalline silicon solar cells have attracted widespread attention due to their high photoelectric conversion efficiency. Monocrystalline silicon is the basic raw material for producing monocrystalline silicon solar cells, and monocrystalline silicon must be produced through a series of processes using silicon raw materials. [0003] The single crystal furnace is a device that uses graphite resistance heaters in an inert gas environment to melt silicon materials and grow dislocation-free single crystals by Czochralski method. The...

AI Technical Summary

Problems solved by technology

[0004] When the single crystal furnace is in operation, the thermal field is a high-temperature environment. When it is in the heating process section, the silicon material in the crucible melts. The crucible is located under the furnace body, surrounded by heaters, and is in the middle of the thermal field. In this way, the heater It can provide heat for the silicon material in the crucible; when it runs to the equal-diameter process section, the liquid level in the crucible will drop. Since the liquid level in the crucible and the guide tube set on the upper part of the furnace body should keep an appropriate distance, so At this time, the crucible needs to be moved up, and the upward movement of the crucible is driven by the crucible support rod. In this way, the crucible is in the upper position of the thermal field, and the heat in the lower part of the thermal field is absorbed by the crucible support rod. Since the crucible support rod is equipped with a water cooling structure , so the temperature of the crucible support rod drops quickly, thereby reducing the temperature at the lower part of the thermal field, so that the heat at the lower part of the thermal field cannot be better used for heating the silicon material in the crucible, resulting in heat loss and consumption of the heater power consumption

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