Field effect transistor and forming method thereof

Abstract

The invention discloses a field effect transistor and a forming method thereof, wherein the field effect transistor comprises a substrate, an ultrathin insulator layer formed on the substrate, an ultrathin quasi-conductor monocrystal thin film formed on the ultrathin insulator layer, and a grid stack formed on the ultrathin quasi-conductor monocrystal thin film, wherein the ultrathin insulator layer is made of monocrystal tombarthite oxide or monocrystal beryllia; the grid stack comprises a grid medium and a grid electrode formed above the grid medium. The field effect transistor and the forming method, provided by the invention, have the advantages of simple structure, compatibility in process, low off-state current, excellent heat dissipation and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a field effect transistor and a forming method thereof. Background technique [0002] Metal-oxide-semiconductor field-effect transistors (MOSFETs) have served the integrated circuit industry for more than 40 years. People have invented a variety of ingenious techniques to make the feature size shrink continuously, but it has not changed its basic structure. However, the integrated circuit design window, including performance, dynamic power consumption, static power consumption, and device tolerances, has shrunk to the point where a new transistor structure needs to be invented. [0003] As the gate length continues to shrink, the transfer characteristics of the MOSFET (I ds -V gs ) degenerates mainly in two aspects. One is that the subthreshold slope becomes larger and the threshold voltage decreases, that is, by reducing the gate voltage V gs...

AI Technical Summary

Problems solved by technology

In 2009, SOI wafer manufacturer Soitec produced UTB-SOI wafers that meet this standard, but the price is very expensive

Especially for SOI MOSFET devices, the bottom of the channel is silicon dioxide, but the thermal conductivity of silicon dioxide with an amorphous structure is very poor, about 1.4W / m·K

Although some people have proposed to use the Source and Drain On Insulator (SDOI) structure to alleviate the problem of channel heat dissipation, but this method is very difficult to process.

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